Electron bombarded semiconductor devices

Silzars, A.; Bates, D.J.; Ballonoff, A.

doi:10.1109/proc.1974.9573

Cited by 21 publications

(2 citation statements)

References 41 publications

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“…However, if we assume that the beam electrons travel at 6 cm/ns, and that the anode signal travels down the wire at 0.8c, then at higher data rates there may be significant phase shift as the beam electrons pass through the deflection hole, and the signal on the anode may have to be slowed. This can be done using dielectric loading, helical structures, lumped parameter transmission lines, or with meander lines as described in [1]. Matching the anode speed to the beam speed allows the use of a longer modulating anode that operates at very high speed.…”

Section: Slow-wave Deflectionmentioning

confidence: 99%

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A freespace crossbar for multi-core processors

Victor¹,

Silzars

Davidson

2008

Proceedings of the 22nd Annual International Conference on Supercomputing

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A new package-level interconnect is described that adapts carbon nanoemissive display technology to create an inexpensive package-level freespace crossbar with single-cycle source-totarget latency. Interconnections are made using filamentary electron beams as the data transmission medium. The beams are electrostatically steered, enabling very large, low latency interchip crossbar networks. The crossbar and associated package are built entirely from existing technology. This paper describes the operation of the crossbar and presents a conceptual design for a processor that uses the crossbar.

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Section: Slow-wave Deflectionmentioning

confidence: 99%

“…Please refer to [1] for a more detailed review of the analytic foundation for electron bombarded semiconductor (EBS) devices. The EBS can be thought of as an electron beam transistor where the electron beam acts as a control element by injecting carriers into the back-biased semiconductor diode at the target position.…”

Section: Electron Bombarded Semiconductorsmentioning

confidence: 99%

A freespace crossbar for multi-core processors

Victor¹,

Silzars

Davidson

2008

Proceedings of the 22nd Annual International Conference on Supercomputing

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Target output circuits for 4‐GHz band deflection‐modulated EBS amplifiers

Makishima

Mitomi

1982

Electron. Comm. Jpn. Pt. I

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This paper presents the performance, design and fabrication of the target output circuit for a 4‐GHz deflection‐modulated EBS amplifier. mounted, have beenn obtained. The relationship between the circuit and output performance is analysed; an output circuit for miniaturization and wide ‐ band operation has been designed. A 4 ‐GHz EBS amplifier has been fabricated and its output investigated. Results show that the output circuit for series parallesl type and has wider bandwidth. The 4 ‐GHz EBS amplifier, using microstrip line output and series diode type circuit ,gives a maximum output of 4.7 Wat 4.25 GHZ, a ‐3 dB bandwidth of 300 MHZ and a gain of 16.7 dB ;these experimental values agree well with the analytical results.

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Radiation Damage

Agajanian¹

1976

Semiconducting Devices

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Electron bombarded semiconductor devices

Cited by 21 publications

References 41 publications

A freespace crossbar for multi-core processors

A freespace crossbar for multi-core processors

Target output circuits for 4‐GHz band deflection‐modulated EBS amplifiers

Radiation Damage

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