Electron-Bombardment Conductivity of Dielectric Films

Ansbacher, F.; Ehrenberg, W.

doi:10.1088/0370-1298/64/4/303

Cited by 55 publications

(15 citation statements)

References 17 publications

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“…Pensak (1949) measured EBIC in amorphous silica prepared by decomposing ethyl silicate while Ehrenberg et aZ(l966) investigated the effect in fused quartz. Their results showed that under electron-beam irradiation, Si02 behaved in a similar manner to other insulators (Ansbacher andEhrenberg 1951, Spear 1955, Aris et aZl976). It is of value, therefore, to determine (a) whether thermally grown Si02 thin films behave in the same manner as other forms of the oxide and (b) whether the theory developed for EBIC (Nunes de Oliveira andGross 1975, Aris et al 1976) is applicable to SiOz.…”

Section: Introductionmentioning

confidence: 95%

Electron-beam-induced conduction in SiO₂thin films

Taylor¹,

Mehdi²

1979

J. Phys. D: Appl. Phys.

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Results are presented of an investigation into electron-beam-induced conduction (EBIC) in films of SiO2 thermally grown on a silicon substrate. A strong dependence on the polarity of the voltage applied during irradiation is observed. For negative applied voltages which correspond to an electron flow to the silicon substrate, the EBIC grain curves follow the predictions of a recent theory. For positive voltages an electron emission analogous to internal photoemission occurs from the silicon substrate as soon as the beam begins to penetrate into the silicon. In some samples this emission current was sufficiently low that an EBIC gain curve due to hole flow to the substrate was observed. However, only by taking into account the dispersive nature of hole transport could agreement between experiment and theory be obtained. Effects due to previous irradiation are observed and interpreted as the generation of traps and/or a space charge build-up during the initial irradiation.

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Section: Introductionmentioning

confidence: 95%

Electron-beam-induced conduction in SiO₂thin films

Taylor¹,

Mehdi²

1979

J. Phys. D: Appl. Phys.

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“…2 are typical of those found in a wide range of inorganic insulators [31,33,37]. The rising part of the curves at low beam energies is controlled primarily by the space-charge-limited current I 2 to the back electrode but is also modified by the decreasing transparency of the front electrode as the beam energy decreases [25].…”

Section: Tantalum Pentotoxidementioning

confidence: 58%

Electron-beam-induced conductivity and related processes in insulating films

Taylor¹

1981

IEE Proc. A Phys. Sci. Meas. Instrum. Manage. Educ. Rev. UK

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The theoretical model for electron-beam-induced conductivity in thin insulating films is reviewed and its application to gain measurements in several different insulating materials is discussed. The ideas incorporated in the model suggest a technique for investigating trapping levels in insulators, using the electron beam as a means of populating the traps. It is suggested that, in addition to determining the trap eneigy, it may be possible to investigate the spatial distribution of the traps. Electron-beam-radiation effects in SiO 2 are briefly commented upon and the dependence of A Vp^, the shift in flat-band voltage of MOS capacitors, on beam energy is discussed in terms of the gain model. Finally consideration is given to the problem of observing voltage contrast from the passivated devices in a scanning electron microscope.

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“…Méthode de la triple couche[5],[6]. -Le potentiel de la face bombardée est maintenu fixe par une couche mince métallique, transparente pour les électrons rapides., 2.…”

unclassified

Méthode de mesure de la conductibilité induite et de l'émission secondaire des isolants sous bombardement électronique

Dufour¹,

Herpin²,

Wendt³

1953

J. Phys. Radium

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Electron-Bombardment Conductivity of Dielectric Films

Cited by 55 publications

References 17 publications

Electron-beam-induced conduction in SiO₂thin films

Electron-beam-induced conduction in SiO₂thin films

Electron-beam-induced conductivity and related processes in insulating films

Méthode de mesure de la conductibilité induite et de l'émission secondaire des isolants sous bombardement électronique

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Electron-Bombardment Conductivity of Dielectric Films

Cited by 55 publications

References 17 publications

Electron-beam-induced conduction in SiO2thin films

Electron-beam-induced conduction in SiO2thin films

Electron-beam-induced conductivity and related processes in insulating films

Méthode de mesure de la conductibilité induite et de l'émission secondaire des isolants sous bombardement électronique

Contact Info

Product

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Electron-beam-induced conduction in SiO₂thin films

Electron-beam-induced conduction in SiO₂thin films