Electron Capture, Hydrogen Release, and Enhanced Gain Degradation in Linear Bipolar Devices

Low Dose Rate Effects in Silicon Based Devices and Integrated Circuits: A Review

“…«повышенная» чувствительность к низкоин-тенсивному облучению), говоря об эффектах низкой интенсивности в биполярных ПП и ИС. Существую-щие физические модели можно разделить на три группы: модели пространственного заряда [53][54][55][56][57], модели бимолекулярных процессов [58][59][60][61][62][63][64] и модель бинарной скорости реакции [65].…”

“…− комбинации процессов разрыва водородных молекул и рекомбинации свободных электронов с за-хваченными или движущимися дырками [62,63];…”

Enhanced Low Dose Rate Sensitivity at Ultra-Low Dose Rates

“…The space-charge effect reduces the charge yield and creates a higher trapped electron density near the interface, thereby decreasing the oxide trapped charge and reducing the degradation at high dose rate [2]. More recent studies have also revealed the important role of hydrogen to ELDRS [7]- [8]. Hydrogen can react with a transporting hole or a metastably trapped hole and release a proton, which can survive recombination with greater probability at low dose rates [8].…”

“…More recent studies have also revealed the important role of hydrogen to ELDRS [7]- [8]. Hydrogen can react with a transporting hole or a metastably trapped hole and release a proton, which can survive recombination with greater probability at low dose rates [8]. Therefore more protons are available to form a higher density of interface traps at low dose rate [8].…”

“…Hydrogen can react with a transporting hole or a metastably trapped hole and release a proton, which can survive recombination with greater probability at low dose rates [8]. Therefore more protons are available to form a higher density of interface traps at low dose rate [8]. In devices with higher hydrogen content, the degradation at a given dose rate increases [7].…”