In a common paradigm, the electronic structure of condensed matter is divided into weakly and strongly correlated compounds. While conventional band theory usually works well for the former class, many-body effects are essential for the latter. Materials like the familiar SrTiO3 compound that bridge or even abandon this characterization scheme are highly interesting. Here it is shown by means of combining density functional theory with dynamical-mean field theory that oxygen vacancies on the STO (001) surface give rise to a dichotomy of weakly-correlated t2g low-energy quasiparticles and localized 'in-gap' states of dominant eg character with subtle correlation signature. We furthermore touch base with recent experimental work and study the surface instability towards magnetic order.The SrTiO 3 (STO) compound has long been known for its paraelectric [1], semiconducting [2] and superconducting properties [3]. Renewed interest is fostered by the findings of a conducting two-dimensional electron system (2DES) on the STO surface [4,5], of intricate magnetic response [6], as well as due to its intriguing role as a prominent building block in novel oxide heterostructures ([7, 8], see e.g. [9, 10] reviews). In this respect, several experiments [4,5,[11][12][13] point towards the importance of oxygen vacancies for the plethora of physics emerging from the inconspicuous bulk band insulator.Stoichiometric strontium titanate is rather unsusceptible to electronic correlations due to nominal Ti 4+ (3d 0 ) valence. However, doping transforms STO into a material with potential for salient signatures of correlation effects. Usually the competition between electron localization and itinerancy in materials can be traced back to the interacting many-body system at stoichiometry. In doped STO, in contrast, defects have to build up the general correlated electronic structure from localized states affecting the low-energy quasiparticle (QP) nature beyond a conventional Anderson-model perspective.The orbital character, filling, correlation strength and mobility of the key electronic states in doped STO is of main interest. In principle, electron doping as introduced by oxygen vacancies could fill the empty Ti-3d(t 2g ) states at low energy. However creating an oxygen vacancy (OV) breaks the bond between Ti-3d(e g ) and O-2p. It has been shown [14][15][16][17][18][19][20][21] that as a result also 3d(e g ) spectral weight appears just below the Fermi level ε F of the established metallic state. Investigations based on density functional theory (DFT) identify this e g weight as associated with an 'in-gap' level due to the vacancy-induced crystal-field lowering. Depending on the local structural deformation, Ti charging, vacancy concentration and energy distance to ε F , that spectral feature may also be interpreted as a small polaron. The latter is here defined by the localization of one electron at an isolated Ti site, i.e. forming Ti 3+ , with sizable distortion of the surrounding oxygen octahedron and binding energy ∼ −1eV [22]. Rec...