Electron counting model and its application to island structures on molecular-beam epitaxy grown GaAs(001) and ZnSe(001)

Pashley, M. D.

doi:10.1103/physrevb.40.10481

Cited by 766 publications

(437 citation statements)

References 17 publications

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“…These dangling-bond configurations are consistent with the electronic properties of reconstructed GaAs(001) surfaces. [20][21][22] If the number of nonbonding electrons is not chosen in the way just described, i.e., by not having the appropriate number of "bulk" hydrogen bonds, the cluster cannot be optimized.…”

Section: Experimental and Theoretical Methodsmentioning

confidence: 99%

Mechanism of Arsine Adsorption on the Gallium-Rich GaAs(001)−(4 × 2) Surface

Lian

et al. 2000

J. Phys. Chem. B

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The kinetics and mechanism of arsine adsorption on the (4 × 2) surface of gallium arsenide (001) has been studied by scanning tunneling microscopy, infrared spectroscopy, and ab initio quantum chemistry calculations. Arsine forms a dative bond to a gallium dimer. Then, this species either desorbs from the surface or decomposes to an AsH 2 or AsH fragment with hydrogen transfer to an arsenic site. Finally, desorption of hydrogen leaves arsenic dimers on the surface. The energy barriers for arsine desorption and dissociation into AsH 2 are estimated to be 9.3 and 16.5 kcal/mol, respectively. Gallium hydride is not produced upon dissociation of AsH 3 because this process is not energetically favorable.

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Section: Experimental and Theoretical Methodsmentioning

confidence: 99%

Mechanism of Arsine Adsorption on the Gallium-Rich GaAs(001)−(4 × 2) Surface

Lian

et al. 2000

J. Phys. Chem. B

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“…Another significant difference is that the models in Figs. 2͑a͒-2͑e͒ obey the electron counting model ͑ECM͒, [9][10][11] but those in Figs. 1͑a͒ and 1͑b͒ do not.…”

Section: Introductionmentioning

confidence: 99%

“…A III-V surface satisfies the ECM if all dangling bonds of the more electropositive element ͑in this case In͒ are empty and all dangling bonds of the more electronegative element ͑Sb͒ are full, which leads to semiconducting state. 11 In addition to the ECM, two other physical factors, which commonly affect the reconstruction formation, are tendencies to decrease the amount of the dangling bonds as well as the electrostatic energy due to the arrangement of the occupied dangling bonds.…”

Section: Introductionmentioning

confidence: 99%

Bismuth-stabilizedc(2×6)reconstruction on a InSb(100) substrate: Violation of the electron counting model

et al. 2010

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By means of scanning tunneling microscopy/spectroscopy ͑STM/STS͒, photoelectron spectroscopy, and first-principles calculations, we have studied the bismuth ͑Bi͒ adsorbate-stabilized InSb͑100͒ substrate surface which shows a c͑2 ϫ 6͒ low-energy electron diffraction pattern ͓thus labeled Bi/ InSb͑100͒c͑2 ϫ 6͒ surface͔ and which includes areas with metallic STS curves as well as areas with semiconducting STS curves. The firstprinciples phase diagram of the Bi/InSb͑100͒ surface demonstrates the presence of the Bi-stabilized metallic c͑2 ϫ 6͒ reconstruction and semiconducting ͑4 ϫ 3͒ reconstruction depending on the chemical potentials, in good agreement with STS results. The existence of the metallic c͑2 ϫ 6͒ phase, which does not obey the electron counting model, is attributed to the partial prohibition of the relaxation in the direction perpendicular to dimer rows in the competing reconstructions and the peculiar stability of the Bi-stabilized dimer rows. Based on ͑i͒ first-principles phase diagram, ͑ii͒ STS results, and ͑iii͒ comparison of the measured and calculated STM and photoemission data, we show that the measured Bi/ InSb͑100͒c͑2 ϫ 6͒ surface includes metallic areas with the stable c͑2 ϫ 6͒ atomic structure and semiconducting areas with the stable ͑4 ϫ 3͒ atomic structure.

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“…41 Quantum mechanical models. Quantum mechanical approaches were attempted by Noguera and Bordier in 1994, 42 that utilized the jellium model for the metal part and the tight binding model for the oxide part.…”

Section: Synthetic Methodologies Of Nhssmentioning

confidence: 99%

Rational synthesis and the structure-property relationships of nanoheterostructures: a combinative study of experiments and theory

Zhou

Wang

2015

NPG Asia Mater

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Nanoheterostructures (NHSs) that combine various nanomaterials into one entity have received an extensive amount of attention in current research. The enhanced performance of the NHSs over their individual constituents have arisen from their unique electronic structure. To rationally synthesize NHSs, two issues need to be addressed. The first issue that should be explored is the mechanism by which the disparate components are integrated into the main structure. The second issue is the relationship between the NHS and its corresponding properties. In this review article, we will focus on these two issues from the perspectives of both experimental and theoretical methodologies.

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Electron counting model and its application to island structures on molecular-beam epitaxy grown GaAs(001) and ZnSe(001)

Cited by 766 publications

References 17 publications

Mechanism of Arsine Adsorption on the Gallium-Rich GaAs(001)−(4 × 2) Surface

Mechanism of Arsine Adsorption on the Gallium-Rich GaAs(001)−(4 × 2) Surface

Bismuth-stabilizedc(2×6)reconstruction on a InSb(100) substrate: Violation of the electron counting model

Rational synthesis and the structure-property relationships of nanoheterostructures: a combinative study of experiments and theory

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