Abstract:The formation mechanism, defect characterization, and
potential
applications of the Si vacancy (VSi) with internal H atoms
in the silicon carbide (SiC) materials have been widely investigated.
However, the inherent electronic properties and related phenomena
induced by internal H dynamics in VSi, especially the C-radical
spin interaction dynamics, are still poorly understood in such nano
SiC. In this work, using the density functional calculations, we explore
the magnetic coupling characteristics and dynamic b… Show more
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