Electron cyclotron resonance chemical vapor deposition of silicon oxynitrides using tris(dimethylamino)silane

Boudreau, Marcel; Boumerzoug, Mohamed; Mascher, P.; Jessop, P. E.

doi:10.1063/1.110243

Cited by 58 publications

(23 citation statements)

References 13 publications

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“…The rare-earth precursor Er(TMHD) 3 was employed to achieve high-concentration Er doping. The deposition system has been described elsewhere [19]. The composition of the films was measured by Rutherford Backscattering Spectroscopy (RBS).…”

Section: Methodsmentioning

confidence: 99%

1.54μm room temperature emission from Er-doped Si nanocrystals deposited by ECR-PECVD

Podhorodecki¹,

Misiewicz²,

Wójcik³

et al. 2006

Journal of Luminescence

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Section: Methodsmentioning

confidence: 99%

1.54μm room temperature emission from Er-doped Si nanocrystals deposited by ECR-PECVD

Podhorodecki¹,

Misiewicz²,

Wójcik³

et al. 2006

Journal of Luminescence

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“…Further details of the deposition system, film growth conditions, and films structure have been discussed previously. 24,25 …”

Section: Sample Preparationmentioning

confidence: 98%

Excitation mechanism and thermal emission quenching of Tb ions in silicon rich silicon oxide thin films grown by plasma-enhanced chemical vapour deposition—Do we need silicon nanoclusters?

Podhorodecki

Golacki

Zatryb

et al. 2014

Journal of Applied Physics

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In this work, we will discuss the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions. By means of electron cyclotron resonance plasma-enhanced chemical vapour deposition, undoped and doped SRSO films have been obtained with different Si content (33, 35, 39, 50 at. %) and were annealed at different temperatures (600, 900, 1100 °C). The samples were characterized optically and structurally using photoluminescence (PL), PL excitation, time resolved PL, absorption, cathodoluminescence, temperature dependent PL, Rutherford backscattering spectrometry, Fourier transform infrared spectroscopy and positron annihilation lifetime spectroscopy. Based on the obtained results, we discuss how the matrix modifications influence excitation and emission properties of Tb ions.

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“…8 The Si contents ͑y͒ were 0.36, 0.39, and 0.42, determined as reported previously. 9 The annealing of the films was performed in a quartz tube furnace under either Ar or Ar+ 5%H 2 atmospheres for 2 h and at temperatures of 900, 1000, and 1100°C.…”

Section: Methodsmentioning

confidence: 99%

The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters

Borrero-González

Nunes

Andreeta

et al. 2010

Journal of Applied Physics

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Temperature dependent photoluminescence from porous silicon nanostructures: Quantum confinement and oxide related transitions J. Appl. Phys. 110, 094309 (2011) Photoluminescence of deep defects involving transition metals in Si: New insights from highly enriched 28Si App. Phys. Rev. 2011, 15 (2011 Photoluminescence of deep defects involving transition metals in Si: New insights from highly enriched 28Si J. Appl. Phys. 110, 081301 (2011) Dielectric effects on the optical properties of single silicon nanocrystals J. Appl. Phys. 110, 074312 (2011) Photoluminescence origins of the porous silicon nanowire arrays J. Appl. Phys. 110, 073109 (2011) Additional information on J. Appl. Phys. The emission energy dependence of the photoluminescence ͑PL͒ decay rate at room temperature has been studied in Si nanoclusters ͑Si-ncl͒ embedded in Si oxide matrices obtained by thermal annealing of substoichiometric Si oxide layers Si y O 1−y , y=͑0.36, 0.39, 0.42͒, at various annealing temperatures ͑T a ͒ and gas atmospheres. Raman scattering measurements give evidence for the formation of amorphous Si-ncl at T a = 900°C and of crystalline Si-ncl for T a = 1000°C and 1100°C. For T a = 1100°C, the energy dispersion of the PL decay rate does not depend on sample fabrication conditions and follows previously reported behavior. For lower T a , the rate becomes dependent on fabrication conditions and less energy dispersive. The effects are attributed to exciton localization and decoherence leading to the suppression of quantum confinement and the enhancement of nonradiative recombination in disordered and amorphous Si-ncl.

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Electron cyclotron resonance chemical vapor deposition of silicon oxynitrides using tris(dimethylamino)silane

Cited by 58 publications

References 13 publications

1.54μm room temperature emission from Er-doped Si nanocrystals deposited by ECR-PECVD

1.54μm room temperature emission from Er-doped Si nanocrystals deposited by ECR-PECVD

Excitation mechanism and thermal emission quenching of Tb ions in silicon rich silicon oxide thin films grown by plasma-enhanced chemical vapour deposition—Do we need silicon nanoclusters?

The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters

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