Electron Dephasing and Weak Localization in Sn Doped In₂O₃ Nanowires

Abstract

We report on (magneto-) transport measurements of individual In2O3 nanowires. We observed that the presence of a weak disorder arising from doping and electron-boundary collisions leads to weak localization of electrons as revealed by the positive magnetoconductivity in a large range of temperatures ( approximately 77 K). From temperature-dependent resistance and magnetoconductivity data, the electron-electron interaction was pointed out as the mechanism responsible for the increase of resistance in the low temperature range and the dominant source of the dephasing at low temperatures. The experimental data provided the phase coherence time tau(phi) approximately T(-2/3) expected for 1D systems, giving consistent support to the mechanisms underlying the weak-localization and electron-electron scattering theories.

Negative Magnetoresistance in Amorphous Indium Oxide Wires

“…It can also be thought of that the low- B nMR is due to the suppression of weak localization4647 by magnetic field. But a closer look at our nMR results reveals some facts which are contradictory to the weak localization proposition48. First, the change in R within the weak localization picture is only 2–3%464748, whereas we observed more than 20% change of nMR over the B range.…”

“…But a closer look at our nMR results reveals some facts which are contradictory to the weak localization proposition48. First, the change in R within the weak localization picture is only 2–3%464748, whereas we observed more than 20% change of nMR over the B range. Second, the T variation of the phase coherence length, L ϕ .…”

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

“…including ITO [67,129,[136][137][138][139][140], and ZnO based materials [141][142][143]. In this subsection, we address the experimental 3D, 2D, and 1D WL effects in ITO thick films, thin films, and nanowires, respectively.…”

Filtros digitais por transformadas de Fourier aplicados em eletroquímica

“…Dependendo do diâmetro do eletrodo, os sinais de correntes registrados possuem resoluções da ordem de subpico-Ampères. [1][2][3][4] Um fator intrínseco aos experimentos eletroquímicos desta natureza é a presença de ruído, definido como sinal indesejado interferente no sinal útil.…”

“…Dependendo do diâmetro do eletrodo, os sinais de correntes registrados possuem resoluções da ordem de subpico-Ampères. [1][2][3][4] Um fator intrínseco aos experimentos eletroquímicos desta natureza é a presença de ruído, definido como sinal indesejado interferente no sinal útil.5 Quando eletrodos com áreas geométricas maiores (centenas de µm 2 ) são utilizados, diversos tipos de ruídos, ainda que presentes, são praticamente inexpressivos e desprezíveis. Já no nível nanométrico, tais ruídos limitam consideravelmente a precisão e a exatidão das medidas de corrente, onde suas ordens de magnitude se aproximam às dos sinais úteis relativos aos processos estudados.…”