Electron Diffraction Study of Epitaxial Graphene Structure Grown upon SiC (0001) Thermal Destruction in Ar Atmosphere and in High Vacuum

Kotousova, I. S.; Лебедев, С. П.; Лебедев, А. А.; Булат, П. В.

doi:10.1134/s1063783419100226

Cited by 6 publications

(3 citation statements)

References 11 publications

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“…The left column in Figure 2 shows DPs from the reconstructed SiC surface annealed in an H2 atmosphere. The right column shows DPs from the surface of an epitaxial graphene monolayer sample grown on a 4H-SiC(0001) substrate with a similar pre-epitaxial preparation of the 4H-SiC(0001) substrate in argon for 15 min at a temperature of 1855°C without intercalation [13]. The DP in Figure 2a with a registration of about 1° demonstrates continuous rodlike reflections (11) of graphene, which is evidence of the 6√3 reconstruction conversion into epitaxial graphene.…”

Section: Resultsmentioning

confidence: 98%

Study of 6√3 Reconstruction Conversion on the of 4H-SiC(0001) Surface to Quasi-free Epitaxial Graphene with Electron Diffraction

Kotousova¹,

Lebedev²,

Антипов³

et al. 2023

Preprint

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A structural study of the 6√3 reconstruction conversion on 4H-SiC substrate surface in an Ar medium with a short sublimation annealing time into quasi-free epitaxial graphene by means of hydrogen intercalation between the upper layer of SiC and the adjacent reconstructed layer was carried out using the technique of reflection high-energy electron diffraction (RHEED) characterizing the surface of a crystalline material. A slight violation of the 6√3 reconstruction layer formation uniformity was found. The results of the study of the crystal structure of quasi-free graphene and single-layer graphene comprising a buffer layer formed on 4H-SiC in the traditional way in an Ar atmosphere without intercalation were compared.

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Section: Resultsmentioning

confidence: 98%

Study of 6√3 Reconstruction Conversion on the of 4H-SiC(0001) Surface to Quasi-free Epitaxial Graphene with Electron Diffraction

Kotousova¹,

Lebedev²,

Антипов³

et al. 2023

Preprint

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“…2 g. The positive (red) region of PC2 includes the graphene diffraction streaks and several additional spots in the middle. Such spots are related to the buffer layer and SiC substrate beneath the graphene [ 29 ]. The initial decrease in score 2 (Fig.…”

Section: Resultsmentioning

confidence: 99%

Machine-learning-assisted analysis of transition metal dichalcogenide thin-film growth

et al. 2023

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In situ reflective high-energy electron diffraction (RHEED) is widely used to monitor the surface crystalline state during thin-film growth by molecular beam epitaxy (MBE) and pulsed laser deposition. With the recent development of machine learning (ML), ML-assisted analysis of RHEED videos aids in interpreting the complete RHEED data of oxide thin films. The quantitative analysis of RHEED data allows us to characterize and categorize the growth modes step by step, and extract hidden knowledge of the epitaxial film growth process. In this study, we employed the ML-assisted RHEED analysis method to investigate the growth of 2D thin films of transition metal dichalcogenides (ReSe2) on graphene substrates by MBE. Principal component analysis (PCA) and K-means clustering were used to separate statistically important patterns and visualize the trend of pattern evolution without any notable loss of information. Using the modified PCA, we could monitor the diffraction intensity of solely the ReSe2 layers by filtering out the substrate contribution. These findings demonstrate that ML analysis can be successfully employed to examine and understand the film-growth dynamics of 2D materials. Further, the ML-based method can pave the way for the development of advanced real-time monitoring and autonomous material synthesis techniques. Graphical Abstract

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“…3 shows the DPS from the reconstructed SiC surface annealed in H 2 atmosphere. The right column shows the DPs from the surface of the sample of the epitaxial graphene monolayer grown on a 4H-SiC(0001) substrate with a similar pre-epitaxial preparation of the 4H-SiC(0001) substrate in argon medium for 15 min at the temperature of 1855 • C without intercalation [13]. The DP in Fig.…”

Section: Resultsmentioning

confidence: 99%

Electron Diffraction Study of transformation the reconstruction 6 3 on 4H-SiC(0001) in quasi-free-standing epitaxial graphene

Kotousova

Lebedev

Антипов

et al. 2022

Physics of the Solid State

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Through the agency of reflection high-energy electron diffraction (RHEED) we have studied the transformation of the reconstruction 6 3 grown on substrate 4H-SiC in an Ar medium with a short sublimation annealing time in quasi-free-standing epitaxial graphene due to the use of hydrogen intercalation. It was found that grown reconstruction layer was not uniform. The comparison of the results of the structural study of quasi-free-standing graphene and single-layer graphene on buffer layer has been made. Keywords: SiC, reconstruction, intercalation, graphene, RHEED.

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Electron Diffraction Study of Epitaxial Graphene Structure Grown upon SiC (0001) Thermal Destruction in Ar Atmosphere and in High Vacuum

Cited by 6 publications

References 11 publications

Study of 6√3 Reconstruction Conversion on the of 4H-SiC(0001) Surface to Quasi-free Epitaxial Graphene with Electron Diffraction

Study of 6√3 Reconstruction Conversion on the of 4H-SiC(0001) Surface to Quasi-free Epitaxial Graphene with Electron Diffraction

Machine-learning-assisted analysis of transition metal dichalcogenide thin-film growth

Electron Diffraction Study of transformation the reconstruction 6 3 on 4H-SiC(0001) in quasi-free-standing epitaxial graphene

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