Electron diffraction study of the faceting of tilt grain boundaries in NiO

Vaudin, Mark D.; Merkle, K. L.; Sass, S.L.

doi:10.1080/01418618908229779

Cited by 7 publications

(2 citation statements)

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“…Strong faceting of tilt GBs was observed in the YBa 2 Cu 3 O 7-x thin films deposited on SrTiO 3 bicrystal substrates [212]. The microfacets and the array of lattice and GB dislocations were observed also in GBs with low h = 8°and high h = 41°misorientation angles in NiO [213].…”

Section: Faceting-roughening In Oxidesmentioning

confidence: 79%

Review: grain boundary faceting–roughening phenomena

et al. 2015

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Similar to free surfaces, the grain boundaries (GBs) in metals, semiconductors and insulators can contain flat (faceted) and curved (rough) portions. In the majority of cases, facets are parallel to the most densely packed planes of coincidence sites lattice formed by two lattices of abutting grains. Facets disappear with the increasing temperature (faceting-roughening transition) and the increasing angular distance from coincidence misorientation. The temperature of GB faceting-roughening transition T R decreases with the increasing inverse density of coincidence sites R. In case of fixed R, T R decreases with the decreasing density of coincidence sites in the GB plane.The intersection line (ridge) between facets or between facets and curved (rough) portions of surfaces can be of first order (two different tangents in the contact point) or of second order (common tangent, continuous transitions). The rough (curved) portions of GB can also form the firstorder rough-to-rough ridges (with two tangents). GB facets control the transition from normal to abnormal grain growth and strongly influence the GB migration, diffusion, wetting, fracture and electrical conductivity.

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Section: Faceting-roughening In Oxidesmentioning

confidence: 79%

Review: grain boundary faceting–roughening phenomena

et al. 2015

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“…However, because of its formalism, the Bollmann's method remains limited to systems for which the two phases (metal and oxide) present crystal lattices rather close in term of symmetry and cell parameters. For instance, this method was successfully applied to the Ni/NiO system for which the metal and oxide lattices remain close [2][3]; but for other systems like Zr/ZrO 2 , the "O" lattice formalism is too restrictive [4]. It is then necessary to generalize this formalism; various solutions exist [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%