Electron drift velocity in silicon

Canali, C.; Jacoboni, Carlo; Nava, F.; Ottaviani, G.; Alberigi-Quaranta, A.

doi:10.1103/physrevb.12.2265

Cited by 471 publications

(158 citation statements)

References 47 publications

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“…Model 1 yields the current saturation at such a high field that the traverse time The carrier velocity in the semiconductor bulk has been measured using the time-of-flight technique 24) . The magnitude of the velocity is confirmed to increase with an increase in the applied field and tends toward saturation at the highest field.…”

Section: Discussionmentioning

confidence: 99%

New Solution to High-Field Transport in Semiconductors: II. Velocity Saturation and Ballistic Transmission

Natori

2009

jjap

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High-field transport in semiconductor diodes at room temperature is analyzed in the reflection-transmission regime. The pseudo-one-dimensional Boltzmann equation with a constant electric field is transformed into a pair of carrier flux equations. They are analytically solved neither with the relaxation time approximation nor with the perturbation expansion.The carrier energy relaxation due to optical phonon emission is essential in high-field transport. The current-and velocity-field characteristics are closely related to flux transmission through a specific layer, in which the elastic scattering is dominant and the optical phonon emission is absent. If the transmission coefficient is much less than unity, the proportionality of the current to the field results as the Ohm's law in high-field range. The current and velocity tend to saturate when the coefficient approaches unity (ballistic transmission). This result provides simple insight into transport in nanoscale devices.

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Section: Discussionmentioning

confidence: 99%

New Solution to High-Field Transport in Semiconductors: II. Velocity Saturation and Ballistic Transmission

Natori

2009

jjap

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“…In our case, we already know the g-factor (from e.g. electron spin resonance lines), so our experiments in strong drift electric fields where spin dephasing is weak can be used to measure transit time with t = h/gm B B 2p , where B 2p is the magnetic field period of the observed precession oscillations, despite the fact that we make DC measurements, not time-of-flight [84,85]. Typical spin-precession data, indicating a transit time of approximately 12 ns to cross 350 mm undoped Si in an electric field of ≈ 580 V cm −1 , are shown in figure 5a.…”

Section: Ballistic Hot Electron Injection and Detection Devicesmentioning

confidence: 99%

“…Typically, relatively large accelerating voltages are used so that the dominant transport mode is carrier drift; the presence of rectifying Schottky barriers on either side of the transport region assures that the resulting electric field does nothing other than determine the drift velocity of spin-polarized electrons and hence the transit time [84,85]-there are no spurious (unpolarized) currents induced to flow. Furthermore, undoped Si transit layers are primarily used; otherwise, band bending would create a confining potential and increase the transit time, potentially leading to excessive depolarization (see §6a) [86].…”

Section: Ballistic Hot Electron Injection and Detection Devicesmentioning

confidence: 99%

Introduction to spin-polarized ballistic hot electron injection and detection in silicon

Appelbaum

2011

Phil. Trans. R. Soc. A.

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Ballistic hot electron transport overcomes the well-known problems of conductivity and spin lifetime mismatch that plague spin injection attempts in semiconductors using ferromagnetic ohmic contacts. Through the spin dependence of the mean free path in ferromagnetic thin films, it also provides a means for spin detection after transport. Experimental results using these techniques (consisting of spin precession and spin-valve measurements) with silicon-based devices reveals the exceptionally long spin lifetime and high spin coherence induced by drift-dominated transport in the semiconductor. An appropriate quantitative model that accurately simulates the device characteristics for both undoped and doped spin transport channels is described; it can be used to recover the transit-time distribution from precession measurements and determine the spin current velocity, diffusion constant and spin lifetime, constituting a spin 'HaynesShockley' experiment without time-of-flight techniques. A perspective on the future of these methods is offered as a summary.

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“…As a consequence, the mean drift velocity in Ge and Si depends on field orientation relative to the crystal axes, especially below 190K. 1,2 Electronic transport in Ge has been extensively studied at temperatures down to 8K. 2 Today, with the development of cryogenic Ge detectors, knowledge of the carrier velocity laws at cryogenic temperatures becomes of utmost important.…”

Section: Introductionmentioning

confidence: 99%

Electron transport properties in high-purity Ge down to cryogenic temperatures

Aubry-Fortuna

Dollfus

2010

Journal of Applied Physics

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Electron transport in Ge at various temperatures down to 20 mK has been investigated using particle Monte Carlo simulation taking into account ionized impurity and inelastic phonon scattering. The simulations account for the essential features of electron transport at cryogenic temperature: Ohmic regime, anisotropy of the drift velocity relative to the direction of the electric field, as well as a negative differential mobility phenomenon along the <111> field orientation. Experimental data for the electron velocities are reproduced with a satisfactory accuracy. Examples of electron position in the real space during the simulations are given and evidence separated clouds of electrons propagating along different directions depending on the valley they belong.

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Electron drift velocity in silicon

Cited by 471 publications

References 47 publications

New Solution to High-Field Transport in Semiconductors: II. Velocity Saturation and Ballistic Transmission

New Solution to High-Field Transport in Semiconductors: II. Velocity Saturation and Ballistic Transmission

Introduction to spin-polarized ballistic hot electron injection and detection in silicon

Electron transport properties in high-purity Ge down to cryogenic temperatures

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