Electron driven mobility model by light on the stacked metal–dielectric interfaces

Abstract

An electron mobility enhancement is the very important phenomenon of an electron in the electronic device, where the high electronic device performance has the good electron mobility, which is obtained by the overall electron drift velocity in the electronic material driven potential difference. The increase in electron mobility by the injected high group velocity pulse is proposed in this article. By using light pulse input into the nonlinear microring resonator, light pulse group velocity can be tuned and increased, from which the required output group velocity can be obtained, which can be used to drive electron within the plasmonic waveguide, where eventually, the relative electron mobility can be obtained, the increasing in the electron mobility after adding up by the driven optical fields can be connected to the external electronic devices and circuits, which can be useful for many applications.

Multifunction interferometry using the electron mobility visibility and mean free path relationship

“…The light intensity( I ) is the electrical field€projected on the photo‐detector, is given by In this work, the electron drift velocity in the studied material (gold) is modulated by the plasmon waves from silicon to graphene as shown in Figure . The driven electron driven mobility is obtained by the driven group velocity injected by the silicon‐graphene plasmonic waves (Pornsuwancharoen et al, , ), which provides the increase in overall electron mobility, therefore the irradiance output at the detector as the function of the recovery arm (OPD, ) of the Michelson interferometer, can be seen in the form of the interference fringe (mobility visibility) by scanning the recovery sensing arm, which is the reference arm. The relationship of the interference fringe in terms of the mobility visibility of the plasmonic interferometer can be written by (Szuatakowski & Palka, ).…”

“…Many works of the interferometers have been employed since the Weiss prototype announced (Shoemaker et al, ), however, there are still some problems to solve, therefore, the searching of the new interferometric systems is continued by the available new materials and detection techniques. Recently, one of the interesting works in plasmonic concept is very promising (Genevet et al, ; Ju et al, ; Yan et al, ; Yeung et al, ), whereby using the integrated layer consists of the attacked silicon‐graphene‐gold layers (Pornsuwancharoen et al, ), in which the micro‐current source could be performed by the light‐electron energy conversion within the nonlinear Panda ring resonator via the whispering gallery mode. The use of graphene material to produce the plasmon wave in the interesting aspect, which can be found in many works (Gumbs, ; Mahigir, Dastmalchi, Shin, Fan, & Veronis, ; Smolyaninov, Hung, & Davis, ; Thomas, Auton, Kundys, Grigorenko, & Kravets, ), especially, with the interferometry applications (Bartoli, ; Gan & Bartoli, ).…”

“…The driven electron driven mobility is obtained by the driven group velocity injected by the silicon-graphene plasmonic waves(Pornsuwancharoen et al, 2017a(Pornsuwancharoen et al, , 2017b, which provides the increase in overall electron mobility, therefore the irradiance output at the detector as the function of the recovery arm (OPD, Dl) of the Michelson interferometer,…”

Electron Mobility Sensor Scheme-Based on a Mach–Zehnder Interferometer Approach

“…An island of the aluminum, gold or silver can be used for plasmonic device applications within realistic device dimensions of 5-15 nm. The light-electron energy conversion on the plasmonic island has also recently been theoretically investigated by Pornsuwancharoen et al [24,25], in which the selected simulation data were based on realistic device parameters. In this paper, taking advantage of the light-electron energy conversion phenomenon, an innovative sensing transducer on an embedded MZI arm, which can be used for various sensing applications, is discussed.…”

“…In this paper, taking advantage of the light-electron energy conversion phenomenon, an innovative sensing transducer on an embedded MZI arm, which can be used for various sensing applications, is discussed. A suitable mathematical description for the modified MZI is also considered in light of the electron mobility concept discussed in the literature [23][24][25][26].…”