2018
DOI: 10.1063/1.5018247
|View full text |Cite
|
Sign up to set email alerts
|

Electron effective mass in In0.33Ga0.67N determined by mid-infrared optical Hall effect

Abstract: Mid-infrared optical Hall effect measurements are used to determine the free charge carrier parameters of an unintentionally doped wurtzite-structure c-plane oriented In 0.33 Ga 0.67 N epitaxial layer. Room temperature electron effective mass parameters of m * ⊥ = (0.205 ± 0.013) m 0 and m * = (0.204 ± 0.016) m 0 for polarization perpendicular and parallel to the c-axis, respectively, were determined. The free electron concentration was obtained as (1.7 ± 0.2) × 10 19 cm −3 . Within our uncertainty limits we d… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
6
0

Year Published

2018
2018
2025
2025

Publication Types

Select...
4
1

Relationship

0
5

Authors

Journals

citations
Cited by 9 publications
(7 citation statements)
references
References 25 publications
1
6
0
Order By: Relevance
“…Assuming the generated free carriers remain localized in the quantum wells, which should be the case in the limit of low excitation power, then the ratio G calc /G meas is essentially proportional to the reciprocal product of the effective mass of the electron and the normal refractive index of the material, as can be seen from eq 1. The easiest trend to explain is the relatively shallow falloff of G calc /G meas toward unity at higher excitation powers; the effective mass of electrons in InGaN is known to increase with band filling, 26 and, for the carrier concentrations considered here, the deduced increase in effective mass is consistent with that reported in ref substantial decrease in the effective mass due to nonparabolicity (a highly unusual situation) it is unlikely to affect the measurement here. Interestingly, the deviation from a constant value of G calc /G meas at the very lowest powers suggests that the electrons are in a different environment at the lowest excitation powers.…”
Section: ■ Resultssupporting
confidence: 83%
See 1 more Smart Citation
“…Assuming the generated free carriers remain localized in the quantum wells, which should be the case in the limit of low excitation power, then the ratio G calc /G meas is essentially proportional to the reciprocal product of the effective mass of the electron and the normal refractive index of the material, as can be seen from eq 1. The easiest trend to explain is the relatively shallow falloff of G calc /G meas toward unity at higher excitation powers; the effective mass of electrons in InGaN is known to increase with band filling, 26 and, for the carrier concentrations considered here, the deduced increase in effective mass is consistent with that reported in ref substantial decrease in the effective mass due to nonparabolicity (a highly unusual situation) it is unlikely to affect the measurement here. Interestingly, the deviation from a constant value of G calc /G meas at the very lowest powers suggests that the electrons are in a different environment at the lowest excitation powers.…”
Section: ■ Resultssupporting
confidence: 83%
“…26 for In 0.2 Ga 0.8 N. The issue of the effect of nonparabolicity of the hole is more difficult due to a lack of experimental data; however as the hole concentration only contributes 14% to the change in reflectivity, unless there is a…”
mentioning
confidence: 99%
“…where me (= 0.22m0) [32] and mhh (= 0.85m0) [33] are the electron and hole effective masses, respectively, m0 is the electron mass in vacuum, and Eg is the material bandgap (2.8 eV for In0.12Ga0.88N). From equation ( 1), we can estimate Eth to be 3.37 eV for an electron impact ionization process to occur.…”
Section: Resultsmentioning
confidence: 99%
“…The best candidate for n -type TE materials is NbFeSb (purple line) for its low deformation potentials ( D ADP = 1.0 eV, D ODP = 1.6 × 10 10 eV/m), low conductivity effective mass m cond (0.33 m 0 ), and high dielectric constant (ε r = 23.0). We refer to m cond as the effective mass of an isotropic parabolic band that gives the same carrier velocity as the overall material’s full bandstructure, which is a quantity that is experimentally accessible; see Supporting Information for more details on how we extract it. HfCoSb and HfNiSn also have quite low deformation potentials ( D ADP = 0.2 eV and D ODP = 1.4 × 10 10 eV/m for HfCoSb and D ADP = 0.1 eV and D ODP = 1.8 × 10 10 eV/m for HfNiSn), but a relatively lower ε r (especially HfCoSb, ε r = 17.5).…”
Section: Results and Discussionmentioning
confidence: 99%
“…The best candidates for n-type TE materials are NbFeSb (purple line) for its low deformation potentials (DADP = 1.0 eV, DODP = 1.6×10 10 eV/m), low conductivity effective mass mcond (0.33 m0), and high dielectric constant (r = 23.0). We refer to mcond as the effective mass of an isotropic parabolic band that gives the same carrier velocity as the overall material's full bandstructure, which is a quantity experimentally accessible; 50 see Appendix for more details on how we extract it.…”
Section: Thermoelectric Charge Transport Propertiesmentioning
confidence: 99%