Electron effective masses, nonparabolicity and scattering times in one side delta-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells at high electron density limit

Safonov, D. A.; Клочков, А. Н.; Виниченко, А. Н.; Sibirmovsky, Yu D.; Каргин, Н.; Васильевский, И. С.

doi:10.1016/j.physe.2021.114787

Cited by 7 publications

(5 citation statements)

References 31 publications

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“…However, very few attempts have been made to study the effect of different scattering mechanisms on τ t and τ q in AlGaAs/InGaAs-based DQW structures. 13,25,26) In this paper, we modulate and analyze τ t and τ q as functions of applied electric field F in Al 0.3 Ga 0.7 As/In 0.15 Ga 0.85 As-based symmetric and asymmetric DQW structures mediated by different scattering mechanisms such as ionized impurity (ii), alloy disorder (al) and interface roughness (ir). We have adopted a static dielectric response function formalism within the RPA and consider the screening of the above discussed scattering potentials by the two-dimensional electrons formed in the In 0.15 Ga 0.85 As QW.…”

Section: Introductionmentioning

confidence: 99%

Modulation of electron transport and quantum lifetimes in symmetric and asymmetric AlGaAs/InGaAs double quantum well structures

Swain,

Sahu,

Sahoo

2023

Jpn. J. Appl. Phys.

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The low-temperature electron transport (τ t ) and quantum (τ q ) lifetimes are modulated as a function of applied electric field (F) in Al0.3Ga0.7As/In0.15Ga0.85As-based symmetric and asymmetric double quantum well structures by considering ionized impurity, alloy disorder and interface roughness scatterings. The asymmetry in the structure potential is achieved through differences in the well widths, i.e. W w1 ≠ W w2. We show that in a symmetric structure (W w1 = W w2 = 120 Å) resonance of subband states (RSS) occurs at F = F rss = 0, whereas in asymmetric structures [(W w1, W w2) = (90 Å, 150 Å) and (W w1, W w2) = (150 Å, 90 Å)], the RSS is shifted and occurs at |F rss| = 16.4 kV cm−1. The symmetric and antisymmetric nature of the subband wave functions at their corresponding F rss makes τ t a minimum and this increases with change in F during multisubband occupancy. However, the absence of the factor 1 – cosθ in the quantum lifetime makes τ q one order less than the magnitude of τ t , but τ q shows a maximum at the corresponding F rss and decreases with change in F. The above changes in τ t and τ q with F make their ratio τ t /τ q maximum at the transition of subband states.

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Section: Introductionmentioning

confidence: 99%

Modulation of electron transport and quantum lifetimes in symmetric and asymmetric AlGaAs/InGaAs double quantum well structures

Swain,

Sahu,

Sahoo

2023

Jpn. J. Appl. Phys.

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“…In this work, we experimentally studied the effect of neutron irradiation on the optical and electronic properties of doped heterostructures with AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs quantum wells (QWs) and different electron concentrations. After bombardment by neutrons, defects and various scattering centers are formed in heterostructures, the concentration of which can be judged from the change in the electron mobility, especially at low measurement temperatures [20]. Also, the formation of defects in the semiconductor heterostructures of the AlGaAs/GaAs/AlGaAs and Al-GaAs/InGaAs/GaAs types can be indirectly studied by the shape and intensity of their photoluminescence spectra.…”

Section: Introductionmentioning

confidence: 99%

Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures

Klochkov,

Yskakov,

Vinichenko

et al. 2023

Materials

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The effect of neutron irradiation on the structural, optical, and electronic properties of doped strained heterostructures with AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs quantum wells was experimentally studied. Heterostructures with a two-dimensional electron gas of different layer constructions were subjected to neutron irradiation in the reactor channel with the fluence range of 2 × 1014 cm−2 ÷ 1.2 × 1016 cm−2. The low-temperature photoluminescence spectra, electron concentration and mobility, and high-resolution X-ray diffraction curves were measured after the deactivation. The paper discusses the effect of neutron dose on the conductivity and optical spectra of structures based on InGaAs quantum wells depending on the doping level. The limiting dose of neutron irradiation was also estimated for the successful utilization of AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs heterostructures in electronic applications.

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“…Due to the inherent high carrier mobility, higher quantum efficiency, and the compatible nature with telecommunication range, the InGaAs/GaAs QW platform attracts the scientific community's wide interest. Several groups are trying to control the transport and optical properties of charge carriers in InGaAs/GaAs QWs by using asymmetric fabrication techniques [18][19][20]. Cunha et al [18] investigated the lateral distribution profile of the charge carriers in onesided modulation-doped In 0.15 Ga 0.85 As/GaAs QWs, which are referred to asymmetrically doped QWs.…”

Section: Introductionmentioning

confidence: 99%

“…The luminescence scans are used to estimate the charge carrier diffusion lengths in undoped and asymmetrically doped QW structures. Safonov et al [19,20] also investigated the low-temperature electron transport properties in asymmetrically doped AlGaAs/In 0.2 Ga 0.8 As/GaAs high electron mobility transistor structures. Here, the low-temperature Shubnikov-de Haas and Hall measurements are performed to estimate the electron effective mass, non-parabolicity coefficient, quantum and transport scattering times.…”

Section: Introductionmentioning

confidence: 99%

Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

Vashisht¹,

Porwal²,

Haldar³

et al. 2022

J. Phys. D: Appl. Phys.

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The impact of interface defect states on the recombination and transport properties of charges in asymmetric modulation-doped InGaAs/GaAs quantum wells is investigated. Three sets of high-mobility InGaAs quantum well structures are systematically designed and grown by the metal-organic vapor phase epitaxy technique to probe the effect of carrier localization on the electro-optical processes. In these structures, a built-in electric field drifts electrons and holes towards the opposite hetero-junctions of the quantum well, where their capture/recapture processes are assessed by temperature-dependent photoreflectance, photoluminescence, and photoconductivity measurements. The strength of the electric field in the structures is estimated from the Franz Keldysh oscillations observed in the photoreflectance spectra. The effects of the charge carrier localization at the interfaces lead to a reduction of the net electric field at a low temperature. Given this, the magnetic field is used to re-distribute the charge carriers and help in suppressing the effect of interface defect states, which results in a simultaneous increase in luminescence and photoconductivity signals. The in-plane confinement of charge carriers in quantum well by the applied magnetic field is therefore used to compensate the localization effects caused due to the built-in electric field. Subsequently, it is proposed that under the presence of large interface defect states, a magnetic field-driven Diamagnetic-Landau shift can be used to estimate the fundamental parameters of charge carriers from the magneto-photoconductivity spectra instead of magneto-photoluminescence spectra. The present investigation would be beneficial for the development of high mobility optoelectronic and spin photonic devices in the field of nano-technology.

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Electron effective masses, nonparabolicity and scattering times in one side delta-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells at high electron density limit

Cited by 7 publications

References 31 publications

Modulation of electron transport and quantum lifetimes in symmetric and asymmetric AlGaAs/InGaAs double quantum well structures

Modulation of electron transport and quantum lifetimes in symmetric and asymmetric AlGaAs/InGaAs double quantum well structures

Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures

Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

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