Electron emission from a hydrogenated diamond surface

Liu, J.; Zhirnov, V.V.; Choi, Woon; Wojak, G. J.; Myers, A. F.; Cuomo, J. J.; Hren, J. J.

doi:10.1063/1.117863

Cited by 19 publications

(6 citation statements)

References 8 publications

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“…This value is consistent with the average tip-sample separation, tip radius, and surface roughness. We can now make a fit to the experimentally obtained histogram, Hl, according to (~;)measured =A ifm(/3) =A if((3)P e((3), (15) where f 111 ((3) is the graph filled to the experimental asymmetric Gaussian-like f3 distribution. The agreement between histogram HI and A iJ,,,(/3) is reasonably good.…”

Section: µM-1mentioning

confidence: 99%

Characterization of thin film electron emitters by scanning anode field emission microscopy

Nilsson

Gröening

Groening

et al. 2001

Journal of Applied Physics

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Scanning anode field emission microscopy is used to map the electron emission current I(x,y) under constant anode voltage and the electron extraction voltage V(x ,y) under constant emission current as a function of tip position on carbon based thin film emitters. The spatially resolved field enhancement factor {3(x,y) is derived from V(x,y) maps. It is shown that large vaiiations in the emission site density (ESD) and current density can be explained in terms of the spatial variation of the field enhancement {3(x,y). Comparison of {3(x,y) and l(x,y) shows that electron emission currents are correlated to the presence of high aspect ratio field enhancing structures. We introduce the concept of field enhancement distribution fl.{3), which is derived from {3(x,y) maps to chm•acterize the field emission properties of thin films. In this context f({3)df3 gives the number of emitters on a unit surface with field enhancement factors in the interval ([3,f3+df3). It is shown experimentally for the carbon thin film emitters investigated that /(/3) has an e~po~en~ial dependence with regard to the field enhancement factor {3. The field enhancement d1stnbutton function fl.{3) can be said to give a complete characterization of the thin film field emission properties. As a consequence, the emitted current density and ESD can be optimized by tuningfl.{3) of the emitting thin film.

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Section: µM-1mentioning

confidence: 99%

Characterization of thin film electron emitters by scanning anode field emission microscopy

Nilsson

Gröening

Groening

et al. 2001

Journal of Applied Physics

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“…The diamond-based devices show even exhibit a negative electron affinity (NEA) when better characteristics owing to a hydrogen terterminated with hydrogen [1][2][3][4][5][6]. NEA is defined mination, inducing a NEA behavior [13][14][15] if the vacuum level E vac lies below the conduction Field-emission measurements [8][9][10] on nitrogenband minimum (CBM ) at the surface and, hence, doped diamond show threshold fields less than 0.5 V mm−1. The mechanism of emission and the hydrogen plasma at 870°C at a hydrogen pressure of 40 mbar in order to smooth and to clean the mond cathodes based on the enhancement of electric fields at metal-diamond-vacuum triple junctions.…”

Section: Introductionmentioning

confidence: 99%

NEA peak of the differently terminated and oriented diamond surfaces

et al. 1999

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The negative electron affinity (NEA) peak of differently terminated and oriented diamond surfaces is investigated by means of ultraviolet photoemission spectroscopy. Electron emission measurements in the range below the conduction band minimum (CBM ) up to the vacuum level E vac permit the quantitative calculation of the upper limit of the NEA value. The inelastic scattering at the surface to the vacuum interface and the emission of electrons from the unoccupied surface states, situated in the band gap, are the mechanisms responsible for explaining this below CBM emission. All the H-terminated diamond surfaces present NEA. However, the characteristic NEA peak observed in the spectra is only detected for the (100)-(2×1):H surface and to a lesser extent for the (110)-(1×1):H surface, while it is absent for the (111)-(1×1):H surface because of the k || -conservation in the photoemission process.

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“…One ''key'' question is whether the negative electron affinity ͑NEA͒ of the diamond surface plays a major role in field emission. 8 The present article expands this study. Diamond surfaces, having undergone various treatments, have been previously reported to undergo emission from a mode other than tunneling.…”

Section: Introductionmentioning

confidence: 55%

Environmental effect on the electron emission from diamond surfaces

Zhirnov¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Efficient and ballistic cold electron emission from porous polycrystalline silicon diodes with a porosity multilayer structure J.Electron field emission from a silicon subsurface based on a generalized Airy function approach Electron emission from silicon field emitters with a thin coating of diamond were studied during exposure to varying pressures of Ne, He, H 2 , and D 2 . Introduction of Ne and He at pressures Ͼ10 Ϫ4 Torr suppressed the emission current. Conditioning of field emitters in a 10 Ϫ5 Torr helium ambient improved the emissivity. After hydrogen and deuterium exposure, a continuous emission current was measured below the initial threshold voltages for electron emission. The effects of deuterium were significantly greater than for hydrogen. We believe this phenomenon is due to the formation of a surface dipole layer of hydrogen or deuterium, bonded to the surface carbon atoms, which lowers the electron affinity of the diamond surface.

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Electron emission from a hydrogenated diamond surface

Cited by 19 publications

References 8 publications

Characterization of thin film electron emitters by scanning anode field emission microscopy

Characterization of thin film electron emitters by scanning anode field emission microscopy

NEA peak of the differently terminated and oriented diamond surfaces

Environmental effect on the electron emission from diamond surfaces

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