Electron emission from boron nitride coated Si field emitters

Sugino, Takashi; Kawasaki, Seiji; Tanioka, Kazuhiko; Shirafuji, Junji

doi:10.1063/1.120183

Cited by 96 publications

(49 citation statements)

References 16 publications

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“…A careful study of the microstructure of the crystallized film using transmission electron microscope images showed evidence of columnar Si nanocrystals around 90 nm in height and around 50 nm in diameter, surrounded by grain boundaries. The observation of FE at an applied field of 15 V/µm compares favorably with that of emission from Si nanowires ~15 V/µm [19], from poly-Si by LPCVD with oxidation sharpening [20] and poly-Si microtips [21] at ~20 V/µm as well as from single c-Si microtips [22] at around 20 V/ µm.…”

Section: Nanosilicon Based Materials Cathodessupporting

confidence: 51%

Nanoengineering of materials for field emission display technologies

Silva

Carey

Chen

et al. 2004

IEE Proc., Circuits Devices Syst.

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The holy-grail in terms of flat panel displays has been an inexpensive process for the production of large area 'hang on the wall' television that is based on an emissive technology. As such electron field emission displays, in principle, should be able to give high quality pictures, with good colour saturation, and, if suitable technologies for the production of the cathodes over large areas were to be made available, at low cost. This requires a process technology where temperatures must be maintained below 450 o C throughout the entire production cycle to be consistent with the softening temperature of display glass. In this paper we show three possible routes for nanoscale engineering of large area cathodes using low temperature processing that can be integrated into a display technology.The first process is based on carbon nanotube-polymer composites that can be screen printed over large areas and show electron field emission properties comparable with some of the best aligned nanotube arrays. The second process is based on the direct large area growth of carbon nanofibres directly on to substrates held at temperatures ranging from room temperature to 300 o C, thereby making it possible to use inexpensive substrates. The third process is based on the use of excimer laser processing of amorphous silicon for the production of lithography free large area three terminal nanocrystalline silicon substrates. Each route has its own advantages, and flexibility in terms of incorporation into an existing display technology. The harnessing of these synergies will be highlighted together, with the properties of the cathodes developed for the differing technologies.

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Section: Nanosilicon Based Materials Cathodessupporting

confidence: 51%

Nanoengineering of materials for field emission display technologies

Silva

Carey

Chen

et al. 2004

IEE Proc., Circuits Devices Syst.

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“…This is comparable to many other emitters such as carbon nanotubes 12 and boron nitride coated Si tips. 13 The Fowler-Nordheim ͑FN͒ plot corresponding to the data in Fig. 4͑a͒ is shown in Fig.…”

mentioning

confidence: 99%

Synthesis of large-area germanium cone-arrays for application in electron field emission

Wan

Wang

Feng

et al. 2002

Applied Physics Letters

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High-vacuum electron-beam evaporation was used to synthesize germanium (Ge) cone-arrays on N+-type (100) Si. The surface morphology of Ti nanocrystals’ catalyst and Ge cone-arrays was investigated by scanning electron microscopy and atomic force microscopy. The lattice constant of the Ge cones determined from x-ray diffraction was nearly identical to that of bulk Ge. The mechanism of Ge cone-arrays’ formation was investigated. The electron field emission properties of the as-prepared Ge cone-arrays were studied based on current–voltage measurements and the Fowler–Nordheim equation.

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“…Figure 5 shows the FE current density as a function of the applied field as a current density versus electric field (J-E) plot, and the inset shows a ln(J/E ) and threshold field (defined to be the electric field required to generate a current density of 1 mA cm -2 ) for the AlN nanostructures were found to be about 3.8 and 7 V lm -1 , respectively. Although the value of the turn-on field from the AlN nanostructure on a sapphire substrate is higher than the best value found for carbon nanotubes [13] and SiC, [14] they are much lower than those of many other types of emitters such as carbon nitride, [15] Si nanostructures, [16] MoO 3 nanobelts, [17] and ZnO nanowires. [18] In a previous study, the selection of the substrate was found to be critical to the FE properties of AlN nanostructures.…”

mentioning

confidence: 99%

Aligned AlN Nanorods with Multi‐tipped Surfaces—Growth, Field‐Emission, and Cathodoluminescence Properties

et al. 2006

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Aluminum nitride, an important member of the group III nitrides with the highest bandgap of about 6.2 eV, has excellent thermal conductivity, good electrical resistance, low dielectric loss, high piezoelectric response, and ideal thermal expansion, matching that of silicon.[1] The interest in field-emission (FE) applications of AlN materials has grown because they exhibit a negative electron affinity.[2] Exhibiting a negative electron affinity means that electrons excited into the conduction band can be freely emitted into vacuum. In addition, high-current emission at a relatively low field is most attractive for FE applications. As a result, significant effort is being devoted to reducing the tip size and increasing the density of the emitting sites by using hierarchical nanostructures. Therefore, the synthesis of AlN nanostructures, such as nanowires, [3] nanotubes, [4] nanocones, [5] nanotips, [6,7] hierarchical comb-like structures, [8] and nanobelts, [9] with controlled high-aspect-ratio shapes and sizes is an important topic worthy of exploration. The promise that one-dimensional (1D) ), [5] nanotips (3.1-4.7 V lm -1 ), [6,7] and hierarchical comb-like structures (2.45-3.76 V lm -1).[8] On the other hand, reports on the luminescence properties of AlN nanostructures are scarce.[9] The AlN nanocones have been observed to have an emission band centered at 481 nm, referred to as a deeplevel or trap-level state.[5]In the present study, we report the growth of well-aligned AlN nanorods with hairy surfaces by a vapor-solid (VS) process. The well-aligned AlN nanorods with hairy surfaces reported here not only provide a new hierarchical nanostructure, but also serve as a promising candidate for FE emitters because of their low electron affinity and the geometry of the multiple-nanotip surfaces. Compared with previous reports on hierarchal growth of AlN nanostructures, [8,10] in this communication we report a higher density of smaller nanotips (∼ 3-15 nm) that were radially grown on the surfaces of AlN nanorods. Each nanotip may serve as an ultrasmall emitter. In addition, growing well-aligned AlN nanorods on Si substrates is amenable to current technology for the fabrication of Sibased microelectronics devices. The subsequent characterization of their cathodoluminescence (CL) reveals that these hierarchical AlN nanostructures possess an intense emission peak, further suggesting potential applications in optoelectronic nanodevices. The structure of the as-grown products has been determined by X-ray diffraction (XRD). As shown in Figure 1, all of the diffraction peaks in the XRD pattern can be identified; they correspond to a hexagonal wurtzite-structured AlN crystal with lattice constants of a = 0.3114 nm and c = 0.4986 nm, consistent with the Joint Committee Powder Diffraction Standard (JCPDS) data file . No other impurity phases were found in the XRD pattern.The morphology of the as-synthesized products has been characterized by scanning electron microscopy (SEM). As shown in Figure 2a, a typical low-magnification...

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Electron emission from boron nitride coated Si field emitters

Cited by 96 publications

References 16 publications

Nanoengineering of materials for field emission display technologies

Nanoengineering of materials for field emission display technologies

Synthesis of large-area germanium cone-arrays for application in electron field emission

Aligned AlN Nanorods with Multi‐tipped Surfaces—Growth, Field‐Emission, and Cathodoluminescence Properties

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