Electron emission from ion-bombarded aluminum

Abstract

The secondary-electron yield from polycrystalline aluminum induced by protons, noble-gas ions, and aluminum ions has been measured as a function of ion energy in the range of 10 to 350 keV and as a function of angle of ion incidence in the interval of 0 ° to 70 °. The experimental data are compared with a theory of electron emission from solids proposed in our previous works. The agreement is good providing additional support for the theory.

Secondary Electron Yield from an Al Surface Bombarded by 20–80 keV Ar+Ions

“…Data of Svensson and Holmén in the ultra-high vacuum condition agree well with present results. 18) A solid line in the figure is a curve proportional to ffiffiffi ffi E p , indicating that the kinetic emission process is, as a matter of fact, the major mechanism in this energy range. [16][17][18][19][20] …”

Evaluation of Boron Distributions in Amorphous 49 BF 2 + ‐ Implanted Silicon

“…A more plausible explanation is the limited accuracy of the stopping cross sections applied in the calculations. The nuclear stopping cross section, Sn, appears firmly established (15), but as discussed by several authors (15,(20)(21)(22)(23)(24) and as illustrated by the large deviations between the different estimates in Fig. 3 (15,(20)(21)(22)(23)(24), and according to the present results Se values close to those-used in TRIM-87 appear reasonable at low BF2 energies (<20 keV), while the estimate by TRIM-89 is more appropriate at the high energies (-140 keV).…”

“…The nuclear stopping cross section, Sn, appears firmly established (15), but as discussed by several authors (15,(20)(21)(22)(23)(24) and as illustrated by the large deviations between the different estimates in Fig. 3 (15,(20)(21)(22)(23)(24), and according to the present results Se values close to those-used in TRIM-87 appear reasonable at low BF2 energies (<20 keV), while the estimate by TRIM-89 is more appropriate at the high energies (-140 keV). This presumably indicates a transition from a low-energy regime with low energy loss to a region with more "ordinary" Se values; such a dependence may be anticipated in materials with a bandgap (semiconductors, insulators), since there are few low-energy excitation levels available (15).…”

Vicinage effect in secondary electron emission from a clean (001) surface of SnTe induced by keV hydrogen clusters

“…Equation (1) has been derived with the assumptions that recoiling target atoms do not play an essential role in the generation of secondary electrons and that the stopping power varies slowly as a function of distance traveled by the ion. It has been found experimentally that Λ and β(θ i ) do not depend much on the ion species and ion energy [3][4][5][6]. Thus (1) has been successfully used to determine the stopping powers for heavy ions of different charge states [7][8][9].…”