Electron emission properties of Cs3Sb photocathode emitters in a panel device

Jeong, Hwanseong; Keller, Kris; Culkin, Brad

doi:10.1116/1.4921183

Cited by 4 publications

(2 citation statements)

References 11 publications

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“…This result also can be explained by the semiconductorsemiconductor junction between Cs 3 Sb and the substrates. Cs 3 Sb is a direct transition type semiconductor with 1.6 eV bandgap and 0.45 eV electron affinity [35]. It is well known that Cs 3 Sb is a p-type semiconductor [10].…”

Section: Discussionmentioning

confidence: 99%

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pn -type substrate dependence of CsK2Sb photocathode performance

Guo

Katoh

2019

Phys. Rev. Accel. Beams

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The CsK 2 Sb photocathode is capable of generating a high-intensity and low-emittance electron beam with visible laser light. In this study, we examined CsK 2 Sb photocathode evaporation on nand p-type Si(100), GaAs(100), and Si(111) substrates, and compared their cathode performance. We found that the quantum efficiency of the p-type substrate was superior to that of the n-type substrate for the same substrate material and surface orientation. We show that this can be qualitatively analyzed by an energy-band model for the semiconductor(metal)-semiconductor junction between CsK 2 Sb and the substrate. We also evaporated the Cs 3 Sb cathode on nand p-type Si(100) and GaAs(100) substrates, and confirmed that the cathode performance of all substrates was consistent with the model results. This finding indicates the possibility of improving the thin-film cathode performance by revisiting the semiconductor(metal)semiconductor junction between the cathode and the substrate, which improves the understanding of high-performance photocathodes.

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Section: Discussionmentioning

confidence: 99%

“…Alkali (Multi) antimonide photocathodes composed of one or more alkali metals, such as Cs 3 Sb and CsK 2 Sb, are widely used in photomultiplier tubes [9]. The Cs 3 Sb is normally a p-type material [10] and has high QE(1%-5%) with visible lasers [11].…”

Section: Introductionmentioning

confidence: 99%

pn -type substrate dependence of CsK2Sb photocathode performance

Guo

Katoh

2019

Phys. Rev. Accel. Beams

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Fabrication of a planar light source utilizing monoalkali antimonide photocathodes as emitters

Jeong

Keller²,

Culkin³

2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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This paper presents a new concept for a planar light source utilizing Cs3Sb photocathodes as flat electron emitters. The design concept of the devices with a diode structure was that the photocathodes were to be operated in a reflective mode. Commercially available P-22 phosphors were used as a light source of desirable wavelengths. Light emission from the devices was induced by photoemitted electrons, accelerated by an anode electric field that was shielded from the photoemitter surface. The luminescent characteristics of the devices were investigated by measuring the optical parameters as functions of applied anode voltages. The results showed the possibility to produce a more directable and easily controllable stream of light. These make the devices suitable for a variety of planar lighting applications.

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Electrical properties of Cs3Sb photocathode emitters in panel device applications

Jeong

Keller²,

Culkin³

2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Nonvacuum process technology was used to produce Cs3Sb photocathodes on substrates, and in situ panel devices were fabricated. The performance of the devices was characterized by measuring anode current as functions of the devices' operation times. An excitation light source with 475 nm wavelength was used for the photocathodes. The device has a simple diode structure, providing unique characteristics such as a large gap, vertical electron beam directionality, and resistance to surface contamination from ion bombardment and poisoning by outgassing species. Accordingly, Cs3Sb photocathodes function as flat emitters, and the emission properties of the photocathode emitters depend on the vacuum level of the devices. Improvement of current stability has been observed after conducting the electrical conditioning process to remove possible adsorbates on Cs3Sb flat emitters.

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Electron emission properties of Cs3Sb photocathode emitters in a panel device

Cited by 4 publications

References 11 publications

pn -type substrate dependence of CsK2Sb photocathode performance

pn -type substrate dependence of CsK2Sb photocathode performance

Fabrication of a planar light source utilizing monoalkali antimonide photocathodes as emitters

Electrical properties of Cs3Sb photocathode emitters in panel device applications

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