Electron energy band alignment at the (100)Si/MgO interface

Afanasʼev, Valeri; Stesmans, André; Cherkaoui, Karim; Hurley, Paul K.

doi:10.1063/1.3294328

Cited by 11 publications

(4 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Turning now to other studied oxides of light metals such as MgO [67] and Sc 2 O 3 [49,68], the transition from the amorphous to the crystalline cubic phase has been found to occur without any measurable change in the electron IPE threshold (within the above indicated experimental accuracy of ±0.1 eV). This leaves the oxide VB shift entirely responsible for the crystallization-induced bandgap widening from 6.1 eV to 7.8 eV in MgO and from 5.6 eV to 6.0 eV in Sc 2 O 3 .…”

Section: Interfaces Of Silicon With Oxides Of Light Elements (Be Mgmentioning

confidence: 66%

“…Summarizing the results concerning band lineup at interfaces of silicon with insulating oxides of light elements, in Figure 7 are shown relative positions of the bandgaps of the discussed oxides referenced to the silicon VB top. [67,74], and a-and c-Sc 2 O 3 (cubic phase) [49,68]. A comparison between the bandgap edge energies of the last three oxides in amorphous and crystalline (all cubic) phases reveals an interesting trend: most of the crystallization-induced bandgap widening occurs through the shift of the VB top edge.…”

Section: Interfaces Of Silicon With Oxides Of Light Elements (Be Mgmentioning

confidence: 98%

See 1 more Smart Citation

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Afanasʼev

2014

Advances in Condensed Matter Physics

View full text Add to dashboard Cite

Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole) transitions across the semiconductor/insulator barrier. Interfaces of various semiconductors ranging from the conventional silicon to the high-mobility Ge-based (Ge,Si1-xGex,Ge1-xSnx) andAIIIBVgroup (GaAs,InxGa1-xAs, InAs, GaP, InP, GaSb, InSb) materials were studied revealing several general trends in the evolution of band offsets. It is found that in the oxides of metals with cation radii larger than≈0.7 Å, the oxide valence band top remains nearly at the same energy (±0.2 eV) irrespective of the cation sort. Using this result, it becomes possible to predict the interface band alignment between oxides and semiconductors as well as between dissimilar insulating oxides on the basis of the oxide bandgap width which are also affected by crystallization. By contrast, oxides of light elements, for example, Be, Mg, Al, Si, and Sc exhibit significant shifts of the valence band top. General trends in band lineup variations caused by a change in the composition of semiconductor photoemission material are also revealed.

show abstract

Section: Interfaces Of Silicon With Oxides Of Light Elements (Be Mgmentioning

confidence: 66%

Section: Interfaces Of Silicon With Oxides Of Light Elements (Be Mgmentioning

confidence: 98%

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Afanasʼev

2014

Advances in Condensed Matter Physics

View full text Add to dashboard Cite

show abstract

“…The band gap width is about 7.8 eV 21,22 , but can be re-duced by defect induced gap states [23][24][25] as well as surface states 26,27 . For MgO thin films the band gap width generally is reduced and depends on fabrication procedure [28][29][30][31][32] . However, none of these cases leads to a finite density of states directly (± 0.5 eV) at E F , which usually falls in the middle of the MgO band gap.…”

Section: Introductionmentioning

confidence: 99%

Structural, chemical, and electronic properties of the Co2MnSi(001)/MgO interface

et al. 2013

View full text Add to dashboard Cite

The performance of advanced magnetic tunnel junctions build of ferromagnetic (FM) electrodes and MgO as insulating barrier depends decisively on the properties of the FM/insulator interface. Here, we investigate interface formation between the half-metallic compound Co2MnSi (CMS) and MgO by means of Auger electron spectroscopy, low energy electron diffraction and low energy photoemission. The studies are performed for different annealing temperatures (TA) and MgO layer coverages (4, 6, 10, 20 and 50 ML). Thin MgO top layers (tMgO ≤10 ML) show distinct surface crystalline distortions, which can only be partly healed out by annealing and furthermore lead to distinct adsorption of carbon species after the MgO surface is exposed to air. For tMgO > 10 ML the MgO layer surface exhibits clearly improved crystalline structure and hence only marginal amounts of adsorbates. We attribute these findings to MgO misfit dislocations occurring at the interface, inducing further defects throughout the MgO layer for up to at least 10 ML. Furthermore, spinpolarized photoemission spectra of the CMS/MgO interface are obtained for MgO coverages up to 20 ML, showing a clear positive spin polarization near the Fermi energy (EF ) in all cases. arXiv:1209.5436v1 [cond-mat.mtrl-sci]

show abstract

“…In addition to its interesting electronic gap (7.8 eV), magnesium oxide has a high dielectric constant (close to 10) [3]. However, despite the large panel of oxide growth processes widely investigated (such as magnetron sputtering [4,5], PLD [6][7][8], molecular beam epitaxy [9,10], E-beam [11][12][13]), some weighty drawbacks inherent to the lack of control of the interface formation still remain. In particular, recent works report the formation of an amorphous silicon oxide layer at the MgO/Si interface due to subcutaneous substrate oxidation [4], as much as the existence of an uncontrolled intermixing layer in the case of MgO deposited on hydrogenated Si surfaces [6,9].…”

Section: Introductionmentioning

confidence: 99%

Study of the Very First Stages of Mg Growth onto Si(100)

Girardeaux

Sarpi

Vizzini

2018

DDF

View full text Add to dashboard Cite

Generation of ultra-thin oxide layers (in the nanometer range) is currently a technological lock for numerous applications such as microelectronics, spintronics or even molecular electronics. A precise study of the stages of growth of Mg is essential before studying the growth of the oxide. In this work we report and discuss an experimental study of the very first stages of Mg growth onto Si(100) by Scanning Tunneling Microscopy-Spectroscopy (STM-STS), Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED). First, we have shown that an amorphous underlayer is formed onto the silicon substrate for Mg deposits of 0.25 monolayers (ML). This underlayer is attributed to a Mg2Si silicide formed at RT during Mg deposition. Then, using an original growth method based on alternate cycles of magnesium monolayer adsorption and room temperature (RT) oxidation, we did grow ultra-thin magnesium oxide films onto Si(100). Our study revealed that the ultra-thin Mg2Si layer at the MgO/Si(100) interface acts as a diffusion barrier and prevents oxidation of the highly-reactive silicon during magnesium oxide growth.

show abstract

Electron energy band alignment at the (100)Si/MgO interface

Abstract: Access to the full text of the published version may require a subscription. Rights

Cited by 11 publications

References 24 publications

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Structural, chemical, and electronic properties of the Co2MnSi(001)/MgO interface

Study of the Very First Stages of Mg Growth onto Si(100)

Contact Info

Product

Resources

About