Electron energy relaxation due to 2TA phonons in n-GaAs and n-InP

Kubakaddi, S. S.; Mulimani, B. G.

doi:10.1016/0375-9601(84)90220-2

Cited by 4 publications

(2 citation statements)

References 7 publications

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“…So we have used in our calculations a value of 19.4 meV for the 2TA phonon energy and for p a value of 0.5. The two-phonon deformation potential parameter D was varied to obtain the best fit with the data in the temperature range 20 K < T e < 40 K. The value so obtained D = 2.0 × 10 3 eV may be compared with the value of 3.0 × 10 3 eV used in explaining the energy relaxation time data in bulk n-GaAs [23]. Any uncertainty about the p value only alters the fitted D value as these two quantities enter the energy loss expression in the form D p 1/2 .…”

Section: Resultsmentioning

confidence: 99%

“…Ganguly and Ngai [21] have formulated an effective Hamiltonian for the interaction between electrons and two-phonons. Employing this formalism the energy loss rates are satisfactorily explained in InSb [22], GaAs [23] by Kubakaddi and co-workers and in GaSb [19] by Obditsch and Kahlert. Free carrier absorption in InSb [21] and mobility in Si [11] are also explained employing electron scattering by two-phonons.…”

Section: Two-phonon Processes In Bulk Semiconductorsmentioning

confidence: 92%

See 1 more Smart Citation

Hot-electron energy relaxation in GaAs/GaAlAs two-dimensional structures: importance of two-phonon processes

Kubakaddi

Suresha

Mulimani

2002

Semicond. Sci. Technol.

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The energy relaxation of hot electrons has been studied in GaAs/GaAlAs two-dimensional structures with emphasis on the role of two-phonon processes for the first time. An expression for the power loss due to electron-two-zone edge transverse acoustic (TA) phonon interaction is derived using the effective carrier-two-phonon interaction Hamiltonian. Numerical calculations for the power loss are presented over a wide electron temperature range by incorporating the electron-two-zone edge TA phonon interaction besides the usual one-phonon scattering. The hot phonon effect for the polar optical phonon scattering has also been included. The very good agreement between the calculations and the experimental data in the GaAs/GaAlAs systems demonstrates the importance of electron-two-phonon scattering processes in power loss from hot electrons.

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Section: Resultsmentioning

confidence: 99%

Section: Two-phonon Processes In Bulk Semiconductorsmentioning

confidence: 92%

Hot-electron energy relaxation in GaAs/GaAlAs two-dimensional structures: importance of two-phonon processes

Kubakaddi

Suresha

Mulimani

2002

Semicond. Sci. Technol.

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Energy loss rate of two-dimensional electron gas in GaInAs/AlInAs, InSb/AlInSb and GaSb/AlGaAsSb heterostructures

Kubakaddi

Suresha

Mulimani

2003

Physica E: Low-dimensional Systems and Nanostructures

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Hot electrons in low-dimensional structures

1991

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The properties of hot electrons in systems where electrons and phonons experience quantum confinement are reviewed. The modifications to the behaviour of electrons and phonons brought about by confinement are described, particularly with reference to the principal scattering mechanisms. The latter include the interaction with longitudinal optical phonons and plasmons, along with carrier-carrier effects. Some conflict in the literature concerning Fuchs-Kliewer polaritons is discussed. Low-temperature interactions with acoustic phonons are described. A central topic is that of energy relaxation, and the experimental and theoretical data relating to this form a large part of the review. Energy relaxation mechanisms in the femtosecond to nanosecond regimes, including intersubband and well-capture processes, are eventually summarized. An equally large section deals with hot-electron transport; in which negative differential resistance and other instabilities associated with parallel transport are discussed before turning to ballistic transport and impact ionization.

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Electron energy relaxation due to 2TA phonons in n-GaAs and n-InP

Cited by 4 publications

References 7 publications

Hot-electron energy relaxation in GaAs/GaAlAs two-dimensional structures: importance of two-phonon processes

Hot-electron energy relaxation in GaAs/GaAlAs two-dimensional structures: importance of two-phonon processes

Energy loss rate of two-dimensional electron gas in GaInAs/AlInAs, InSb/AlInSb and GaSb/AlGaAsSb heterostructures

Hot electrons in low-dimensional structures

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