Electron field emission characteristics of boron nanowires grown by ultralow pressure CVD

Abstract

The observation of an electron field emission phenomenon from boron nanowires (BNWs) is presented. In this study, large-scale-patterned BNWs were synthesized on silicon substrates by a thermal pyrolysis chemical vapor deposition method and demonstrated to be a field emission lightluminescence panel. The field emission performance characteristics of a BNW-based emitter device strongly depended on the morphology of BNWs. In addition, the observation of light luminescence revealed good uniformity and excellent lifetime of up to 10 h, which implied that this type of boron or boron contained in a one-dimensional nanomaterial might be an alternative candidate for next-generation field emission devices.

Preparation of few-layer graphene-capped boron nanowires and their field emission properties

“…Because boron has a unique crystal structure and stable physicochemical properties, it is a promising cold-cathode material for the flat field emission devices. [1][2][3][4] In the last few decades, different morphology boron one-dimension nanostructures, such as nanowires, [5][6][7] nanotubes, [8,9] nanocones, [10,11] and nanobelts, [12,13] have been prepared by chemical vapor deposition (CVD) and their field emission (FE) properties have been characterized. However, the surfaces of the boron one-dimensional nanostructure materials tend to form 2-3 nm thick oxide layers, decreasing the conductivity and emission of electrons.…”

High Performance Field Emitters

“…For each material the standard errors (< n > ≃ 3, extracted from literature) are shown. The materials considered include the 1D nanowires – BaO, LaB 6, Copper tetracyanoquinodimethane (CuTCNQ), Alq3, Si, MgO, AlN, CdS, SiC, W, ITO, CuPC, B, PPy, SnO 2 , InGaN, CNTs, Cu, ZnSe, diamond, GaN, ZnO, ZnMgO, WS 2 , WO, WO 3 , MoO 2 , and ZnS, the 2D platelets – CuO, h‐BN, CbO, MoS 2 , graphene (monolayer, vertically standing, clustered, and few layer), RGO, C nanowall, WS 2 ‐RGO, ZnO and SnS 2 , and the 3D/bulk materials – a ‐diamond, LaB 6 , nanodiamond, DLC, a ‐C, AlN, ta ‐C, Si tips, ZnSe, diamond, Cu tips, ZnO, Ni tips, chemica...…”