2002
DOI: 10.1063/1.1482141
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Electron field emission from excimer laser crystallized amorphous silicon

Abstract: We show field emission from excimer laser crystallized ͑ELC͒ hydrogenated amorphous silicon (a-Si:H) at current densities and threshold fields suitable for display applications. The laser crystallized a-Si:H gives rise to a densely packed and relative sharp surface morphology that gives emission currents of the order of 10 Ϫ5 A ͑current densitiesϷ0.04 A/cm 2 ͒ at threshold fields less than 15 V/m in a diode configuration, without the need for a forming process. With the progress in utilizing ELC in flat panel … Show more

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Cited by 37 publications
(24 citation statements)
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“…The electron emission results are reproducible over several measurement cycles and independent of the vacuum gap. The emission threshold for sample 1 is similar to the one reported for single-crystal Si tips [11,12], polycrystalline Si tips [11,13,14], Si nanowires [15], graphite films [16], and is higher then the typical values of 2-5 V/µm reported for carbon nanotubes [17]. The data plotted in Fig.…”
Section: Contributedsupporting
confidence: 73%
See 1 more Smart Citation
“…The electron emission results are reproducible over several measurement cycles and independent of the vacuum gap. The emission threshold for sample 1 is similar to the one reported for single-crystal Si tips [11,12], polycrystalline Si tips [11,13,14], Si nanowires [15], graphite films [16], and is higher then the typical values of 2-5 V/µm reported for carbon nanotubes [17]. The data plotted in Fig.…”
Section: Contributedsupporting
confidence: 73%
“…The fieldβ = 214. This value exceeds significantly the geometric field enhancement factor, which is defined as the ratio of enhancement factor derived from the fit for sample 1 is the height to the radius of the hillocks [13] and amounts to ≈ 2. Therefore, we conclude that the electron emission is greatly enhanced due to internal field enhancement.…”
Section: Contributedmentioning
confidence: 97%
“…The crystallisation of amorphous silicon films using pulsed laser beams [1] has become one of the leading techniques for the fabrication of polycrystalline silicon (polySi) layers used as an active material in thin-film transistors, solar cells and field emission devices [2][3][4]. For the laser crystallization process the amorphous starting material should contain a low hydrogen concentration since the laser-induced rapid annealing of the specimens causes the material to decompose into silicon and hydrogen gas that leads to ablation of the film.…”
Section: Introductionmentioning
confidence: 99%
“…Such a description aids us in explaining the spotty non-uniform nature of the emission across the surface of the film in which the local arrangement of the clusters below the surface is important. This concept of dielectric inhomogeneity has also been applied to explain the field emission from boron-doped Si nanoparticle chains (Tang et al, 2001), amorphous CN x films prepared by pulsed laser deposition (Fogarassy et al, 2002), laser crystallised a-Si:H (Tang et al, 2002) as well as to ion beam synthesized SiC layers (Tsang et al, 2002).…”
Section: Electron Field Emission: Theory Materials and Mechanismsmentioning
confidence: 99%