Electron field emission from narrow band gap semiconductors (InAs)

Литовченко, В.Г.; Еvtukh, А.А.; Semenenko, M.; Grygoriev, A.; Yilmazoglu, Oktay; Hartnagel, H.L.; Sirbu, L.; Tiginyanu, I. M.; Ursaki, V. V.

doi:10.1088/0268-1242/22/10/003

Cited by 6 publications

(7 citation statements)

References 16 publications

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“…Cd 3 As 2 with its sufficiently high Fermi level (in spite of high work function), is also a suitable candidate for achieving a larger emission current density by exploiting the high sensitivity of the dual-peak feature with the variation of F , T and ε F . Finally, we remark that our model does not capture secondary effects, such as field-induced topological phase transition [9,13,63], band bending [64], space charge [65,66], and Fermi velocity shifting [58,67]. Such effects could be included in future works to investigate their roles on the thermal-field emission characteristics of 3D DSM/WSM.…”

Section: Discussionmentioning

confidence: 99%

Thermal-field electron emission from three-dimensional Dirac and Weyl semimetals

Chan

Ang

2021

Phys. Rev. B

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A model is constructed to describe the thermal-field emission of electrons from a three-dimensional (3D) topological semimetal hosting Dirac/Weyl node(s). The traditional thermal-field electron emission model is generalised to accommodate the 3D non-parabolic energy band structures in the topological Dirac/Weyl semimetals, such as cadmium arsenide (Cd 3 As 2 ), sodium bismuthide (Na 3 Bi), tantalum arsenide (TaAs) and tantalum phosphide (TaP). Due to the unique Dirac cone band structure, an unusual dual-peak feature is observed in the total energy distribution (TED) spectrum. This non-trivial dual-peak feature, absent from traditional materials, plays a critical role in manipulating the TED spectrum and the magnitude of the emission current. At zero temperature limit, a new scaling law for pure field emission is derived and it is different from the well-known Fowler-Nordheim (FN) law. This model expands the recent understandings of electron emission studied for the Dirac 2D materials into the 3D regime, and thus offers a theoretical foundation for the exploration in using topological semimetals as novel electrodes.

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Section: Discussionmentioning

confidence: 99%

Thermal-field electron emission from three-dimensional Dirac and Weyl semimetals

Chan

Ang

2021

Phys. Rev. B

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“…Due to the narrow band gap of InAs, it is relatively difficult to reach nanostructuring in this compound via electrochemical etching techniques. Nevertheless, the formation of InAs micro-and nanopencils was reported [28]. However, the obtained structures are inhomogeneous.…”

Section: Dissolution Mechanisms and Types Of Pores: Crystallographica...mentioning

confidence: 99%

Porous semiconductor compounds

Monaico

Tiginyanu

Ursaki

2020

Semicond. Sci. Technol.

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In this review paper, we present a comparative analysis of the electrochemical dissolution of III-V (InP, GaAs, GaN), II-VI (ZnSe, CdSe) and SiC semiconductor compounds. The resulting morphologies are discussed, including those of porous layers and networks of low-dimensional structures such as nanowires, nanobelts, and nanomembranes. Self-organized phenomena in anodic etching are disclosed, leading to the formation of controlled porous patterns and quasi-ordered distribution of pores. Results of templated electrochemical deposition of metal nanowires, nanotubes and nanodots are summarized. Porosification of some compounds is shown to improve luminescence characteristics as well as to enhance photoconductivity, second harmonic generation and Terahertz emission. Possible applications of porous semiconductor compounds in various areas are discussed.

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“…Stable field emitter structures have already been demonstrated using a sophisticated etching technology in InAs materials [38]. The resulting surface consisted of high density nanostructures with cone shapes.…”

Section: Self-arranged Wide Bandgap Semiconducting Field Emitters (Gamentioning

confidence: 99%

“…This method is based on the work function changing under photoexcitation of electrons or hot electrons at their tunneling through a barrier according to the FN mechanism. A (photoassisted) field emission spectroscopy method was developed for characterization of the conduction band structure of wide bandgap materials such as GaN, AlGaN, and ZnO [7,20,28,29,[38][39][40][47][48][49][50]. It is based on pure field emission or employs light emitting diodes (LEDs) or an optical laser for photoexcitation of electrons.…”

Section: Self-arranged Wide Bandgap Semiconducting Field Emitters (Gamentioning

confidence: 99%

“…The work described in this section reports a simple fabrication of ordered field emitter tips with the help of selfarranged nano-structures. Stable field emitter structures have already been demonstrated using a sophisticated etching technology in InAs materials [38]. The resulting surface consisted of high density nanostructures with cone shapes.…”

Section: Self-arranged Wide Bandgap Semiconducting Field Emitters (Gan Algan and Zno)mentioning

confidence: 99%

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Electron field emission from nanostructured semiconductors under photo illumination

Yilmazoglu¹,

Еvtukh²,

Al-Daffaie³

et al. 2014

Turk J Phys

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New device concepts and materials for the fabrication of compact high-frequency vacuum sources and micronano-integrated X-ray sources are of particular interest for broadband communication, security screening of packages and chemical materials, biomedical examination, and other applications. This article integrates results on GaN-and ZnObased nano and self-assembled structures. They were used as field emitter tips for cold electron emission at high local electric fields as well as for photoassisted field emitters to generate bunched electrons directly from the emitter tip. The results on functional field emitters as cold electron sources will be presented. They are key elements for building, among other miniaturized vacuum tubes. Such miniaturized vacuum tubes can achieve high power at high cutoff frequencies and overcome the limitations of conventional GaAs-or InP-based solid-state devices. Furthermore, new functional X-ray sources with ultrashort pulses will allow 3D imaging with low radiation doses.

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Electron field emission from narrow band gap semiconductors (InAs)

Cited by 6 publications

References 16 publications

Thermal-field electron emission from three-dimensional Dirac and Weyl semimetals

Thermal-field electron emission from three-dimensional Dirac and Weyl semimetals

Porous semiconductor compounds

Electron field emission from nanostructured semiconductors under photo illumination

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