2004
DOI: 10.1134/1.1642688
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Electron flow enhancement with a diamond membrane

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Cited by 8 publications
(7 citation statements)
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“…Similar mechanisms have been considered earlier in . Estimations show that with the diffusion length of electron losses in the high‐quality diamond film is L e ∼ 0.1–0.2 µm , in the field E c , the energy gained by the electrons is E e = E c L e = 35–70 eV. These accelerated electrons can produce secondary electrons with SEE coefficient δ ∼ E e /2.5 E g = 2.5–5, which is determined by the energy gap of diamond, E g = 5.5 eV, .…”
Section: Study Of the Cathode Emissivity And Discussion Of The Experimentioning
confidence: 54%
“…Similar mechanisms have been considered earlier in . Estimations show that with the diffusion length of electron losses in the high‐quality diamond film is L e ∼ 0.1–0.2 µm , in the field E c , the energy gained by the electrons is E e = E c L e = 35–70 eV. These accelerated electrons can produce secondary electrons with SEE coefficient δ ∼ E e /2.5 E g = 2.5–5, which is determined by the energy gap of diamond, E g = 5.5 eV, .…”
Section: Study Of the Cathode Emissivity And Discussion Of The Experimentioning
confidence: 54%
“…Normally, insulators have relatively high (greater than 2) coefficients of sec ondary emission. This is due to the fact that insulators exhibit relatively low affinity energies (potential barri ers for the emission of secondary electrons) and rela tively large free path lengths of electrons in the con duction band owing to large band gaps [7][8][9]. It is demonstrated in [7][8][9] that the coefficient of second ary emission amounts to 100 under the condition for the negative affinity (zero potential barrier at the sur face-vacuum interface).…”
Section: Resultsmentioning
confidence: 98%
“…This is due to the fact that insulators exhibit relatively low affinity energies (potential barri ers for the emission of secondary electrons) and rela tively large free path lengths of electrons in the con duction band owing to large band gaps [7][8][9]. It is demonstrated in [7][8][9] that the coefficient of second ary emission amounts to 100 under the condition for the negative affinity (zero potential barrier at the sur face-vacuum interface). At the field strength from [7], the exponential dependence is not observed (as in the case under study), so that the work function of second ary electrons is related only to an increase in the con ductivity inside the diamond structure.…”
Section: Resultsmentioning
confidence: 98%
“…13 At the same time, diamond is used in numerous industrial fields. As a consequence, various diamond structuring strategies have been developed to fit specific requirements, 46 e.g., large surface areas, geometrically ordered microstripes or meshes, 7 nano-objects or nanostructures (wires, rods, and whiskers), 8,9 porous films and membranes, 10,11 etc.…”
Section: Introductionmentioning
confidence: 99%
“…27,30,32 In the course of the development and usage of these supports, various aspects of procedures that can be used and specific applications have already been discussed. For example, diamond nanoparticles in a polymer matrix can be used for fabricating porous diamond structures, 7,19 for enhancing the seeding efficiency in planar diamond deposition and for diamond growth on vertical structures. 20,33,34 In the case of diamond deposition on graphitelike materials, the proper seeding technology and the chemical stability of these materials has a direct effect on the final geometry of the structure that is formed.…”
Section: Introductionmentioning
confidence: 99%