Electron g-factor and spin decoherence in GaAs quantum nanodisks fabricated by fully top-down lithography

Tanaka, Toru; Kiba, Takayuki; Higo, Akio; Clifford, Thomas; Tamura, Yasuaki; Samukawa, Seiji; Murayama, Akihiro

doi:10.1016/j.jcrysgro.2015.02.066

Cited by 1 publication

(8 citation statements)

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“…The electron effective g factor in arrays of these disks were investigated experimentally in Ref. [38] for the magnetic field parallel to the system growth direction, which is chosen to be the z direction in our simulation. Both NDs are suggested to be perfect cylinders with the base radius r D = 7.5 nm and height h D = 8 nm [38].…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

“…[38] for the magnetic field parallel to the system growth direction, which is chosen to be the z direction in our simulation. Both NDs are suggested to be perfect cylinders with the base radius r D = 7.5 nm and height h D = 8 nm [38]. We put the origin of the coordinate system in the center of the cylinder.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

“…The newly developed biotemplate and neutral-beam etching fusion top-down process can immediately provide us with nanoscale structures of precisely controlled geometrical and material characteristics [35]. Recently, using this process, strain-and defect-free high-quality GaAs/Al x Ga 1−x As nanodisks (NDs) have been fabricated with a precise control of the disks' geometrical and material parameters [36][37][38]. It is known that the effective g factor of electrons in lowdimensional GaAs/Al x Ga 1−x As structures (according to a structure's actual geometrical and material parameters) may change from the small negative value g GaAs ≈ −0.44 to a positive one of similar absolute value [22,39].…”

Section: Introductionmentioning

confidence: 99%

“…Very recently, the electron effective g factor in GaAs NDs fabricated by damage-free neutral-beam etching using bionanotemplates was studied by means of time-resolved Kerr rotation [38] (see Fig. 1).…”

Section: Introductionmentioning

confidence: 99%

“…1). It was suggested that the [38]. Two types of the arrays are presented: (a) isotropic surroundings of a ND and (b) anisotropic surroundings of a ND.…”

Section: Introductionmentioning

confidence: 99%

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Tuning of the electrongfactor in defect-free GaAs nanodisks

Yang

Tsai

et al. 2015

Phys. Rev. B

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We theoretically study the impact of changes in surroundings on the electron ground-state effective g factor in defect-free GaAs/AlGaAs nanodisks. To perform the study, we formulate and deploy a computational efficient full three-dimensional model to describe the effective g-factor tensor in semiconductor nano-objects of complex geometry and material content. This model is based on an effective 2 × 2 conduction-band Hamiltonian which includes the Rashba and Dresselhaus spin-orbit couplings. The description is suited to clarify the important question of the controllability of the electron effective g factor in semiconductor nano-objects. The results of this theoretical study suggest that in the defect-free GaAs/AlGaAs nanodisks, the effective g factor can be tuned within a wide range by proper design of the nanodisk environment. The zz components of the electron effective g-factor tensor obtained in our simulation are in good agreement with some recent experimental observations.

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Section: Simulation Results and Discussionmentioning

confidence: 99%

Section: Simulation Results and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…1). It was suggested that the [38]. Two types of the arrays are presented: (a) isotropic surroundings of a ND and (b) anisotropic surroundings of a ND.…”

Section: Introductionmentioning

confidence: 99%

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