Electron Hall mobility in GaAsBi

Kini, R. N.; Bhusal, L.; Ptak, Aaron J.; France, Ryan M.; Mascarenhas, A.

doi:10.1063/1.3204670

Cited by 99 publications

(59 citation statements)

References 16 publications

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“…Electron mobility of GaAsBi does not show significant degradation with Bi alloying [50,51,220,221], which is the opposite of the case of N incorporation in GaAs where the electron mobility is significantly degraded due to strong carrier scattering at the localized states formed by isolated N and N-clusters [222,223]. Bismuth incorporation causes degradation of hole mobility in GaAs.…”

Section: Transport Propertiesmentioning

confidence: 78%

“…When both N and Bi are used, it is possible to independently control CB and VB in GaAsNBi, and thus extend light emission wavelength very efficiently. Other beneficial properties when using Bi include large spin-orbit (SO) split band [46,47], less temperature sensitive bandgap [32,48,49], minor influence on both electron [50] and hole mobility [51] for small Bi concentrations, enhancement of PL intensity [44] and surfactant effect ensuring smooth surface [52], etc. Sweeney and Jin proposed theoretically that GaAsNBi is promising for efficient near IR light emitting devices [53].…”

Section: Theoretical Predictionmentioning

confidence: 99%

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Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

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Section: Transport Propertiesmentioning

confidence: 78%

Section: Theoretical Predictionmentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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“…A 250-nm thick GaAs buffer layer was grown on the substrates before growing the GaAs 1-x Bi x epilayers. More details about the growth can be found in Ref [20]. We have also studied a heterostructure sample, in which a 100 nm AlAs layer was grown between the GaAs buffer layer and the 300 nm GaAs 1-x Bi x epilayer.…”

Section: Methodsmentioning

confidence: 99%

Resonant state due to Bi in the dilute bismide alloyGaAs1−xBix

et al. 2014

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It has been theoretically predicted that isolated Bi forms a resonant state in the valence band of the dilute bismide alloy, GaAs 1-x Bi x . We present ultrafast pump-probe reflectivity measurements of this interesting alloy system which provide experimental evidence for the resonant state. The reflectivity transients for pump/probe wavelengths λ ~ 860 -900 nm has negative amplitude which we attribute to the absorption of the probe pulse by the pump induced carriers that are localized at the Bi resonant state. Our measurements show that the lifetime of carriers localized at the resonant state is ~ 200 ps at 10K.* rajeevkini@iisertvm.ac.in 2

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“…It has been found to be in the range from 2000 cm 2 /Vs to 2800 cm 2 /Vsmuch larger than the electron mobility in LTG GaAs and in diluted GaNAs alloys. Slightly lower electron mobilities were obtained from the Hall-effect measurement on heavily n-doped GaBiAs [128].…”

Section: Gabiasmentioning

confidence: 99%

Semiconductors for terahertz photonics applications

Krotkus¹

2010

J. Phys. D: Appl. Phys.

112

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Abstract:Generation and measurement of ultrashort, sub-picosecond pulses of electromagnetic radiation with their characteristic Fourier spectra that reach far into terahertz (THz) frequency range has recently become a versatile tool of the far-infrared spectroscopy and imaging. This technique -THz time-domain spectroscopy, in addition to a femtosecond pulse laser, requires semiconductor components manufactured from materials with a short photoexcited carrier lifetime, high carrier mobility, and large dark resistivity. Here we will review most important developments in the field of investigation of such materials. Main characteristics of low-temperature-grown or ion-implanted GaAs and semiconducting compounds sensitive in the wavelength ranges around 1 µm and 1.5 µm will be surveyed. The second part of the paper is devoted to the effect of surface emission of THz transients from semiconductors illuminated by femtosecond laser pulses. Main physical mechanisms leading to this emission as well as their manifestation in various crystals will be described.

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Electron Hall mobility in GaAsBi

Cited by 99 publications

References 16 publications

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Resonant state due to Bi in the dilute bismide alloyGaAs1−xBix

Semiconductors for terahertz photonics applications

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