1999
DOI: 10.1103/physrevlett.83.4832
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Electron-Hole Correlation in Quantum Dots under a High Magnetic Field (up to 45 T)

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Cited by 18 publications
(24 citation statements)
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“…Cingolani et al have studied electron-hole correlation under high magnetic fields (up to 45 T) [100]. Figure 18 shows a comparison of the experiments with Hartree-Fock calculations.…”
Section: The Influence Of An External Magnetic Fieldmentioning
confidence: 99%
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“…Cingolani et al have studied electron-hole correlation under high magnetic fields (up to 45 T) [100]. Figure 18 shows a comparison of the experiments with Hartree-Fock calculations.…”
Section: The Influence Of An External Magnetic Fieldmentioning
confidence: 99%
“…The confinement of carriers to overgrown InAs QD is primarily based on the GaAs/InAs band-edge discontinuity at the surface of the pyramid and the strain has only a secondary role. Current research into QD LED and lasers is primarily G aA s In G aA s G aA s (001) (101) In P [100] [010]…”
Section: Introductionmentioning
confidence: 99%
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“…Such effect was observed for quantum wells (see, for example, Ref. [19]), quantum dots [20] and quantum disks [21]. It was also observed for a system of InP/InGaP two vertically stacked dots [22,23], which corresponds to the situation discussed above.…”
Section: Resultsmentioning
confidence: 55%
“…This class of QD's is of particular value for fundamental investigations due to their precisely known state degeneracies and optical selection rules, their equidistant and tunable energy-level splittings, and their high optical quality. They have been studied in investigations of carrier relaxation, magnetic-field effects, and strain effects, [9][10][11][12][13][14][15][16][17] and have been proposed for chargestorage devices. 18 The QD's investigated here consist of a near-surface InGaAs/GaAs QW in which a lateral confinement potential is generated by the strain from InP stressor islands grown on the sample surface.…”
Section: Introductionmentioning
confidence: 99%