Electron-Hole-Pair Creation Energies in Semiconductors

Alig, R. Casanova; Bloom, S.

doi:10.1103/physrevlett.35.1522

Cited by 228 publications

(165 citation statements)

References 21 publications

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“…Our calculated values listed in Table 1 compare well with the empirical expectation E eh ≈ 3E gap . 55 For alkali iodides, because of the wide band gap and the comparatively narrow valence band widths, a hole in the valence has low probability for scattering and creating SEs. 56,57 Thus, the neglect of holes in our treatment is to some extent justified.…”

Section: Resultsmentioning

confidence: 99%

Secondary Electron Cascade Dynamics in KI and CsI

Ortiz

Caleman

2007

J. Phys. Chem. C

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We present a study of the characteristics of secondary electron cascades in two photocathode materials, KI and CsI. To do so, we have employed a model that enables us to explicitly follow the electron trajectories once the dielectric properties have been derived semiempirically from the energy loss function. Furthermore, we introduce a modification to the model by which the energy loss function is calculated in a first-principle manner using the GW approximation for the self-energy of the electrons. We find good agreement between the two approaches. Our results show comparable saturation times and secondary electron yields for the cascades in the two materials, and a narrower electron energy distribution (51%) for KI compared to that for CsI.

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Section: Resultsmentioning

confidence: 99%

Secondary Electron Cascade Dynamics in KI and CsI

Ortiz

Caleman

2007

J. Phys. Chem. C

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“…In most experimental studies, carrier multiplication energy threshold E CM has been observed as significantly higher than naivelyexpected 2E g . This phenomenon is even more prominent in bulk semiconductors, where E CM ~ 4E g provided electron effective mass m e ~ hole effective mass m h [73,74], due to the requirement of energy and momentum conservation among carriers involved in impact ionization. Successful E CM reduction down to ~2E g however has been recently observed utilizing momentum spread and small m e /m h ratio in InAs QDs [71].…”

Section: Utilization Of Higher Energy Photonsmentioning

confidence: 99%

A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

Tanabe

2009

Energies

158

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Solar cells are a promising renewable, carbon-free electric energy resource to address the fossil fuel shortage and global warming. Energy conversion efficiencies around 40% have been recently achieved in laboratories using III-V semiconductor compounds as photovoltaic materials. This article reviews the efforts and accomplishments made for higher efficiency III-V semiconductor compound solar cells, specifically with multijunction tandem, lower-dimensional, photonic up/down conversion, and plasmonic metallic structures. Technological strategies for further performance improvement from the most efficient (Al)InGaP/(In)GaAs/Ge triple-junction cells including the search for 1.0 eV bandgap semiconductors are discussed. Lower-dimensional systems such as quantum well and dot structures are being intensively studied to realize multiple exciton generation and multiple photon absorption to break the conventional efficiency limit. Implementation of plasmonic metallic nanostructures manipulating photonic energy flow directions to enhance sunlight absorption in thin photovoltaic semiconductor materials is also emerging.

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“…In an analogous process to that described above for ion chambers, absorption of a photon in a silicon crystal creates separations of charge, which are called electron-hole pairs and require an average energy, ", of 3.66 AE 0.03 eV (Alig & Bloom, 1975;Scholze et al, 2000) for generation. Physically, electrons and holes are charged electronic excited states of atoms in the crystal lattice, which move under the influence of electric fields, such as that caused by the difference in chemical potential between the p (boron or aluminium doped) and n (phosphorus, arsenic or antimony doped) layers, resulting in the flow of an electric current.…”

Section: Silicon Pin Diodesmentioning

confidence: 99%

Determination of X-ray flux using silicon pin diodes

et al. 2009

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Accurate measurement of photon flux from an X-ray source, a parameter required to calculate the dose absorbed by the sample, is not yet routinely available at macromolecular crystallography beamlines. The development of a model for determining the photon flux incident on pin diodes is described here, and has been tested on the macromolecular crystallography beamlines at both the Swiss Light Source, Villigen, Switzerland, and the Advanced Light Source, Berkeley, USA, at energies between 4 and 18 keV. These experiments have shown that a simple model based on energy deposition in silicon is sufficient for determining the flux incident on high-quality silicon pin diodes. The derivation and validation of this model is presented, and a web-based tool for the use of the macromolecular crystallography and wider synchrotron community is introduced.

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Electron-Hole-Pair Creation Energies in Semiconductors

Cited by 228 publications

References 21 publications

Secondary Electron Cascade Dynamics in KI and CsI

Secondary Electron Cascade Dynamics in KI and CsI

A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

Determination of X-ray flux using silicon pin diodes

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