Electron Holography Surmounts Resolution Limit of Electron Microscopy

Orchowski, Alexander; Rau, W.D.; Lichte, Hannes

doi:10.1103/physrevlett.74.399

Cited by 147 publications

(57 citation statements)

References 13 publications

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“…Beyond this limit, the information is corrupted and contrast reversals occur. Various techniques have been suggested in order to solve for the phase of the image-plane wave function, such as off-axis holography (Lichte, 1991;Orchowski, Rau & Lichte, 1995) and focal-series reconstruction (Van Dyck, Op de Beeck & Coene, 1993). Knowledge of the image phase informa-tion allows the lens aberrations to be deconvolved, thus extending the resolution.…”

Section: Introductionmentioning

confidence: 99%

Electron Ptychography. I. Experimental Demonstration Beyond the Conventional Resolution Limits

Nellist¹,

Rodenburg²

1998

Acta Cryst Sect A

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A solution to the phase problem of electron diffraction is described which allows an aberration-free atomic resolution image of Si (110), showing the expected dumbbell contrast, to be reconstructed at a resolution of 3 times the point resolution and 2.5 times the information limit of the scanning transmission electron microscope (STEM) used. The data set required consists of coherent microdiffraction patterns recorded as a function of illuminating probe position and the method of image reconstruction beyond the conventional resolution limits using this data set is described. Using the inherent redundancy in the experimental data set, the accuracy of the reconstructed image is examined and the experimental imperfections that affect it are identified. It is found that aperture charging, compounded by distortions in the detection system, are the major sources of error. As an additional application of this method of phase retrieval, the diffracted-beam phases of electrons that have lost energy by exciting a plasmon are compared with those of elastically scattered electrons in a specimen of graphite. Within the limits of this approach, it is found that there is no difference in the beam phases, supporting the view that electrons that have undergone multiple elastic and inelastic scattering dominate the plasmon-loss scattering at higher angles.

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Section: Introductionmentioning

confidence: 99%

Electron Ptychography. I. Experimental Demonstration Beyond the Conventional Resolution Limits

Nellist¹,

Rodenburg²

1998

Acta Cryst Sect A

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“…those that operate in the mid-voltage range around 300 kV and use coherently scattered electrons, an information limit of 0.10 nm was reported already in 1993 8 . Electron holography exploited this information limit down to 0.104 nm 9 . Alternatively, it was reported that a direct reconstruction of the phase and the amplitude of the scattered electron wave from a focal series of HRTEM images is suitable to extend the interpretable resolution of a field emission microscope down to its information limit 10 .…”

Section: Introductionmentioning

confidence: 99%

Imaging columns of the light elements carbon, nitrogen and oxygen with sub Ångstrom resolution

et al. 2001

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It is reported that lattice imaging with a 300 kV field emission microscope in combination with numerical reconstruction procedures can be used to reach an interpretable resolution of about 80 pm for the first time. A retrieval of the electron exit wave from focal series allows for the resolution of single atomic columns of the light elements carbon, nitrogen, and oxygen at a projected nearest neighbor spacing down to 85 pm. Lens aberrations are corrected on-line during the experiment and by hardware such that resulting image distortions are below 80 pm. Consequently, the imaging can be aberration-free to this extent. The resolution enhancement results from increased electrical and mechanical stability's of the instrument coupled with a low spherical aberration coefficient of 0.595 + 0.005 mm.

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“…Furthermore, the resolution of these techniques is limited to the pointresolution of the microscope, which typically ranges from 1.7 Å to 2.5Å for midvoltage TEMs. More recently, significant experimental and computational advancements have been made in HRTEM-based techniques designed to retrieve the electron wave function at the exit surface of the specimen [15][16][17]. The use of exit-plane wave function (EPWF) images offers important advantages over existing methods.…”

Section: Quantifying Stoichiometry Of Iii-v Semiconductor Interfacesmentioning

confidence: 99%

Collaborative Research and Development. Delivery Order 0006: Transmission Electron Microscope Image Modeling and Semiconductor Heterointerface Characterization

Mahalingam¹

2006

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The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Department of Defense, Washington Headquarters Services, Directorate for Information SPONSORING/MONITORING AGENCY REPORT NUMBER(S) AFRL-ML-WP-TR-2006-4248 DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution is unlimited. characterization studies were performed on a variety of novel III-V semiconductor heterostructures being developed for advanced optoelectronic device applications. A new approach is developed for true atomic scale compositional mapping of interfaces in mixed cation-anion III-V semiconductor heterostructures. This approach is applied for quantifying stoichiometry of interfaces in InAs/InGaSb superlattices. Detailed TEM studies were performed on short-period InAs/GaSb superlattices eith periods ranging from 50A to 11A. Significant degradation in structural quality was observed with reduction in the superlattice period. Improvement in quality is however achieved by reducing the growth rate (specifically in the GaSb growth rate). The formation of heterojunction quantum dots (QD) composed of a combination of InAs and GaSb is demonstrated. The composite dot is achieved by first forming InAs QDs by normal self assembly process followed by growth of a GaSb crown atop the InAs QD structure. Transmission electron microscopy indicated a clear boundary between the GaSb and InAs regions with energy dispersive spectroscopy analysis showing an In rich core and a Sb rich cap. SUPPLEMENTARY NOTES PAO

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Electron Holography Surmounts Resolution Limit of Electron Microscopy

Cited by 147 publications

References 13 publications

Electron Ptychography. I. Experimental Demonstration Beyond the Conventional Resolution Limits

Electron Ptychography. I. Experimental Demonstration Beyond the Conventional Resolution Limits

Imaging columns of the light elements carbon, nitrogen and oxygen with sub Ångstrom resolution

Collaborative Research and Development. Delivery Order 0006: Transmission Electron Microscope Image Modeling and Semiconductor Heterointerface Characterization

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