Electron interferometry at a metal-semiconductor interface

Kubby, Joel; Greene, W. J.

doi:10.1103/physrevlett.68.329

Cited by 46 publications

(11 citation statements)

References 12 publications

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“…13,14 In recent years, the primary use of z(V) spectroscopy has been to study barrier resonances for the purpose of characterizing local surface potential variations. It has been applied to ultrathin insulating films, 15,16 small organic molecules, 17,18 semiconductors, 19 fullerenes, 20,21 and graphene. 22,23 The basic z(V) measurement is very simple, as illustrated schematically in Fig.…”

Section: Introductionmentioning

confidence: 99%

Modeling the constant-current distance-voltage mode of scanning tunneling spectroscopy

2011

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We demonstrate the relationship between sample density of electronic states and constant-current distancevoltage spectra starting from the usual expressions for tunneling current in scanning tunneling microscopy experiments. First-order differential equations are derived for the tip position as a function of voltage drop across the tunnel junction for both square and trapezoidal barrier transmission functions. Numerical solutions of the square barrier equation are carried out for different sample density of states and compared with self-consistent integration of the tunneling integral equation. It is shown that normalization of the distance vs voltage spectra by taking logarithmic derivatives reproduces the peak positions in the sample density of states usually to within 0.1 eV. The use of differential equations is proposed as an accurate method for analyzing experimental data and applied to the example case of the π * orbital of the c(8 × 2) phase of benzoate on Cu(110).

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Section: Introductionmentioning

confidence: 99%

Modeling the constant-current distance-voltage mode of scanning tunneling spectroscopy

2011

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“…The resulting modulation patterns were ascribed to interference between scattered electrons at the boundaries of the nanostructures (Heller et al, 1994;Fiete and Heller, 2003). STM and STS can also detect electronic states confined in a direction perpendicular to the surface, in thin films (Kubby and Greene, 1992;Becker and Berndt, 2010) and nanostructures (Altfeder, Matveev, and Chen, 1997;Yang et al, 2009), where the motion of electrons is confined by the surface and the interface with substrates.…”

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confidence: 99%

Spin-polarized quantum confinement in nanostructures: Scanning tunneling microscopy

et al. 2014

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Experimental investigations of spin-polarized electron confinement in nanostructures by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) are reviewed. To appreciate the experimental results on the electronic level, the physical basis of STM is elucidated with special emphasis on the correlation between differential conductance, as measured by STS, and the electron density of states, which is accessible in ab initio theory. Experimental procedures which allow one to extract the electron dispersion relation from energy-dependent and spatially resolved STM and STS studies of electron confinement are reviewed. The role of spin polarization in electron confinement is highlighted by both experimental and theoretical insights, which indicate variation of the spin polarization in sign and magnitude on the nanometer scale. This review provides compelling evidence for the necessity to include spatial-dependent spin-resolved electronic properties for an in-depth understanding and quantitative assessment of electron confinement in magnetic nanostructures and interaction between magnetic adatoms.

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“…It has been demonstrated some time ago that the relief of a semiconductor surface buried under a thin metallic film can be imaged with STM by using electron interferometry. [5][6][7] For metal/ semiconductor systems, the surface LDOS is dominated by the evanescent part of transverse quantized states which develop in the metallic overlayer. As the energy of the bulk resonances depends on the local thickness of the film, spatial variations of the surface LDOS can be evidenced by imaging at a proper voltage and related to the buried relief.…”

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confidence: 99%

“…As the energy of the bulk resonances depends on the local thickness of the film, spatial variations of the surface LDOS can be evidenced by imaging at a proper voltage and related to the buried relief. Originally the method was proposed by Kubby et al 5 to investigate the Ni/ Si͑111͒ interface and silicide formation by mapping the tunnel conductance which is almost proportional to the density of states at the surface. A few years later Altfeder et al have been able to image the step edges of a Si͑111͒ substrate buried under thick ͑ϳ100 Å͒ Pb islands by simply recording constant current images at small gap voltage ͑few millivolts͒.…”

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confidence: 99%

Imaging a buried interface by scanning tunneling spectroscopy of surface states in a metallic system

Didiot¹,

Веденеев²,

Fagot‐Revurat³

et al. 2005

Phys. Rev. B

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Electron interferometry at a metal-semiconductor interface

Cited by 46 publications

References 12 publications

Modeling the constant-current distance-voltage mode of scanning tunneling spectroscopy

Modeling the constant-current distance-voltage mode of scanning tunneling spectroscopy

Spin-polarized quantum confinement in nanostructures: Scanning tunneling microscopy

Imaging a buried interface by scanning tunneling spectroscopy of surface states in a metallic system

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