Electron-Ion Mixed Conduction of Ru-Doped BaCe_0.9Y_0.1O_3-δ Thin Film

Abstract

0.05 Y 0.10 O 3-δ : BCRY) thin film has been prepared on (0001) Al 2 O 3 substrate by RF magnetron sputtering. The BCRY thin film crystallized at 600°C exhibits a-and c-axes orientations. The electrical conductivity of BCRY thin film is higher than that of BaCe 0.90 Y 0.10 O 3-δ (BCY) thin film. The activation energy (E A ) of BCRY thin film is ~0.25 eV, which corresponds to half E A of BCY thin film, below 400°C. The conductivity depends on oxygen partial pressure. The Fermi level (E F ) of BCRY thin film shifts to the conduction band side, although the E F of BCY thin film locates at the valence band side. The above results indicate that the BCRY thin film occurs the electron-ion mixed conductions below 400°C.

Oxide Ion Conduction of BaCe_0.80Zr_0.10Y_0.10O_3-δ Thin Film with Oxygen Vacancies

“…The spectrum corresponds to the transition from Ce3d 5/2 core level to the unoccupied Ce 4f state. The spectral shape and peak position is similar to those of CeO 2 and BaCe 0.90 Y 0.10 O 3- [28,31]. Two peaks at 881 and 883.3 eV correspond to Ce 3+ (on1) and Ce 4+ (on2), respectively.…”

Electrical and structural properties of BaCe0.85Ru0.05Y0.10O3−δ thin film prepared by RF magnetron sputtering

“…Such thin films have a lot of oxygen vacancies, which are needed for electron or proton conduction in the thin films. [15][16][17] Furthermore, the influence of film thickness may be used to control of lattice constant. 15) In this paper, we present the structural and electrical properties at the surface and bulk regions of BCRY thin films and discuss the role of Ru 5+ substitution in terms of electron structure.…”