Electron irradiation effects on the properties of heavily phosphorus-doped a-Si : H films prepared from undiluted silane

Abstract

The effects of 1.0 MeV electron irradiation on the dark conductivity and amorphous network of heavily phosphorus-doped a-Si : H films have been studied. The electron irradiation leads to a strong decrease by about two orders of magnitude in the dark conductivity of heavily phosphorus-doped a-Si : H films and the degradation comes to a saturation. The evolutions of the amorphous silicon network of heavily doped a-Si : H films caused by electron irradiation were investigated by Raman spectroscopy. The observed decrease in the amorphous silicon network order in the short and intermediate range suggests that the electron irradiation induces structural defects in the films. This defect creation also tends to saturate after a long irradiation time.

Effect of incorporation of highly‐ordered a‐Ge:H nanoparticles on the performance of perovskite solar cells

“…One possible explanation for this phenomenon is that the high hydrogen content makes the network of a-Ge: NPs different from those of μc-Ge:H and a-Ge:H thin films which finally causes such an additional Raman peak from 500 to 600 cm −1 . The Raman spectra of a-Ge:H NP samples synthesised under different RH (9,19,29) conditions are shown in Fig. 3b.…”

“…It is noted that the local mode at ∼116 cm −1 was attributed to the Ge–H x bonds at the NP surface [28] and the appearance of the local mode further manifested the high hydrogen content in the a‐Ge:H NPs network. It is well known that the width of TO peak (Γ TO ) and the location of TO peak ( ω TO ) are associated with the short‐range order of the amorphous network [26], and the presence of the LA peak is due to the coordination defects in the amorphous network [29]. Figs.…”

Structural characterization of superlattice of microcrystalline silicon carbide layers for photovoltaic application

“…[39][40][41][42][43], and the increase in I LA /I TO reflects the increase in defects and stress in the material. 44 The #SiC-ML1 is predominantly microcrystalline with a sharp (Lorentzian)…”

A novel Si film with Si nanocrystals embedded in amorphous matrix on Cu foil as anode for lithium ion batteries

“…1 the spectra over the wavenumber range from 100 to 600 cm À 1 can be decomposed into four Gaussian peaks, corresponding to transverse optical (TO) mode centered at about 480 cm À 1 , longitudinal optical (LO) mode at about 380 cm À 1 , longitudinal acoustic (LA) mode at about 300 cm À 1 and transverse acoustic (TA) mode at about 140 cm À 1 [12]. The frequency ω TO and linewidth Γ TO of TO mode are dependent on the short range order of amorphous Si network, as their values are sensitive to the nearest-neighbor bond-angle fluctuations [12,13]. An increase of short range order of electron beam irradiated Si films is manifested by a decrease of Γ TO from 47.8 to 46.3 cm À 1 and a blue-shift of ω TO from 485.5 to 487.8 cm À 1 .…”