Electron irradiation for adjusting the reverse recovery time and forward voltage drop characteristics of fast diodes

Iliescu, E.; Niculescu, A.; Banu, Viorel; Nichita, A.; Sturzu, N.

doi:10.1016/s0168-583x(97)00985-3

Cited by 2 publications

(2 citation statements)

References 2 publications

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“…N B of irradiation diodes were be a little bit decreased from no treatment, this support the concept that defects or traps in bulk decreased resistivity of bulk [3][4][5] and agreed with dropping of current conduction in high-level injection. …”

Section: A I-v Characteristicssupporting

confidence: 70%

Degradation in electrical properties of Si-PIN Power diodes after treatment by electron irradiation

Itthikusumarn

Prabket

Poyai

2013

2013 13th International Symposium on Communications and Information Technologies (ISCIT)

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Power diodes development concentrate on fast switching, high reverse voltage blocking and low power consumption. One way to improve switching property is reducing minority carrier lifetime by electron irradiation. This paper presented degradation of silicon PN junction which cause from lifetime modification by electron irradiation. Silicon PIN power diodes were irradiated electron ray at different dose, 50, 100 and 150 KGy respectively, to compare with no treatment diodes. The result show that electron irradiation can reduce lifetime extremely but saturation current which effect to reverse leakage current will increase more than two orders when diodes were irradiated. J A -W D method shows that increasing in generation current via center traps of defects from irradiation is major reason of degradation in reverse leakage current and other electrical characteristics.

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Section: A I-v Characteristicssupporting

confidence: 70%

Degradation in electrical properties of Si-PIN Power diodes after treatment by electron irradiation

Itthikusumarn

Prabket

Poyai

2013

2013 13th International Symposium on Communications and Information Technologies (ISCIT)

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“…However, this method significantly increases the leakage current [18]. In contrast, there is another method to control the lifetime of minority carriers by forming defects via electron-beam or particle ion-beam irradiation [19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37], and the physical and electrical characteristics of the defects have been investigated [38][39][40][41][42][43][44][45][46]. The leakage current can be reduced to less than that of a solely Au-diffused diode by generating defects via electron-beam irradiation (EI) [47].…”

Section: Introductionmentioning

confidence: 99%

Silicon ultrafast recovery diode with leakage current reduced via the combined lifetime process of gold diffusion and electron-beam irradiation

Onishi,

Shirai

2023

Semicond. Sci. Technol.

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We investigated the reduction in the reverse-biased leakage current of Si ultrafast recovery diodes via a combined lifetime process involving Au diffusion and bulk electron-beam irradiation (EI). The leakage current of the combined-processed diode was significantly reduced to less than one-third of that of the diode processed solely with Au diffusion, maintaining a similar switching time of 32 ns. This reduction was not achievable with the sole use of EI. Deep-level transient spectroscopy revealed that the reduction in the leakage current was due to the coexistence of the deep trap level of Au (E c-0.51 eV) and the shallow trap level of the defects (E c-0.39 eV) generated via EI as lifetime killers. By combining the deep and shallow trap levels, the lifetime of the carriers generated in the depletion layer of the reverse-biased p-n junction becomes long and consequently, the leakage current is reduced. By maintaining the trap density ratio of defects to diffused Au above 0.28, the leakage current was reduced to less than one-third of that in the solely Au-diffused diode, while maintaining a similar switching time.

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Electron irradiation for adjusting the reverse recovery time and forward voltage drop characteristics of fast diodes

Cited by 2 publications

References 2 publications

Degradation in electrical properties of Si-PIN Power diodes after treatment by electron irradiation

Degradation in electrical properties of Si-PIN Power diodes after treatment by electron irradiation

Silicon ultrafast recovery diode with leakage current reduced via the combined lifetime process of gold diffusion and electron-beam irradiation

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