Electron Microscopic Studies on Domain Structure of PbZrO<sub>3</sub>

Tanaka, Michiyoshi; Saito, Ryuichi; Tsuzuki, Kaoru

doi:10.1143/jjap.21.291

Cited by 81 publications

(40 citation statements)

References 9 publications

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“…The results of our electron microscope studies show that the room temperature antiferroelectric domain structure of Pb(Zr 0.99 Ti 0.01 )O 3 single crystals is the same as the one reported earlier for PbZrO 3 at room temperature [5,17]. The 90Њ domains occurring was observed in two perpendicular sets of 1/4 110 reflections in the [001] o zone axis SADP.…”

Section: Resultssupporting

confidence: 87%

“…The reflections of 1/2 110 are visible in two perpendicular directions owing to simultaneous diffraction of the electron beam by two neighboring antiferroelectric domains rotated by 90Њ with respect to each other (90Њ domains). This observation is similar to the one reported by Tanaka for PbZrO 3 [17]. The superlattice reflections along ͗110͘ direction point to the quadrupling of the paraelectric cubic perovskite unit cell caused by the S 3 soft mode which leads to antipolar displacements of Pb-cations in the antiferroelectric, orthorhombic state.…”

Section: Figssupporting

confidence: 89%

“…2). Different origin of the ferroic domain contrast was discussed earlier by several authors [17,24,25]. High magnification image obtained with the electron beam parallel to another ͗111͘ c , namely, the [011] o orthorhombic direction, is shown in Fig.…”

Section: Figsmentioning

confidence: 60%

“…At room temperature the antiferroelectric perovskite structure of the crystal is the same as for PbZrO 3 crystals with the orthorhombic Pbam space group [6,20,21]. The antiparallel polarization in the crystals of the orthorhombic symmetry can take the direction of ͗110͘ c type, and the {100} c and {110} c planes can be the 90Њ and 60Њ domain walls, respectively [17,23]. Fig.…”

Section: Methodsmentioning

confidence: 96%

“…Transmission electron microscope studies of PbZrO 3 single crystals at room temperature and in the intermediate phase were performed by Tanaka et al [17]. The authors observed 90Њ and 60Њ domain configurations and, in specific conditions, also 180Њ domains in the antiferroelectric phase of the crystals.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Transmission electron microscopy studies of Pb(Zr0.99Ti0.01)O3 single crystals

Menguy

Caranoni

Hilczer

et al. 1999

Journal of Physics and Chemistry of Solids

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Section: Resultssupporting

confidence: 87%

Section: Figssupporting

confidence: 89%

Section: Figsmentioning

confidence: 60%

Section: Methodsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Transmission electron microscopy studies of Pb(Zr0.99Ti0.01)O3 single crystals

Menguy

Caranoni

Hilczer

et al. 1999

Journal of Physics and Chemistry of Solids

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Tunable Domain Switching Features of Incommensurate Antiferroelectric Ceramics Realizing Excellent Energy Storage Properties

Shi

Chen

et al. 2022

Advanced Materials

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An incommensurate modulated antiferroelectric phase is a key part of ideal candidate materials for the next generation of dielectric ceramics with excellent energy storage properties. However, there is less research carried out when considering its relatively low polarization response. Here, the incommensurate phase is modulated by stabilizing the antiferroelectric phase and the energy storage performance of the incommensurate phase under ultrahigh electric field is studied. The tape‐casting method is applied to construct dense and thin ceramics. La3+ doping induces a room‐temperature incommensurate antiferroelectric orthorhombic matrix. With little Cd2+, the extremely superior energy storage performances arose as follows: when 0.03, the recoverable energy storage density reaches ≈19.3 J cm‐3, accompanying an ultrahigh energy storage efficiency of ≈91% (870 kV cm‐1); also, a giant discharge energy density of ≈15.4 J cm‐3 emerges during actual operation. In situ observations demonstrate that these superior energy storage properties originate from the phase transition from the incommensurate antiferroelectric orthorhombic phase to the induced rhombohedral relaxor ferroelectric one. The adjustable incommensurate period affects the depolarization response. The revealed phase‐transition mechanism enriches the existing antiferroelectric–ferroelectric transition. Attention to the incommensurate phase can provide a reference for the selection of the next generation of high‐performance antiferroelectric materials.

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Preferential Creation of Polar Translational Boundaries by Interface Engineering in Antiferroelectric PbZrO₃ Thin Films

Wei

Vaideeswaran

Sandu

et al. 2015

Adv Materials Inter

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the paraelectric to AFE phase transition, cell quadrupling in PbZrO 3 results in the appearance of TBs. These boundaries are characterized by translation vectors R = [ a / n 1 , b / n 2 , c / n 3 ], 1/ n i ( i = 1, 2, 3), which are fractions of the unit-cell translation vectors. In this work, we report on the relation between formation of polar TBs and the interfacial strain in the system of PbZrO 3 thin fi lms grown on SrTiO 3 substrates. In combination with geometric phase analysis (GPA), [ 28 ] high-angle annulardark-fi eld (HAADF) imaging and Stripe scanning transmission electron microscopy (STEM) techniques based on aberrationcorrected STEM allowed us to determine the structural arrangement and strain distribution near the interfaces.Epitaxial PbZrO 3 thin fi lms were grown on (100) SrTiO 3 substrate and on BaZrO 3 -buffered (100) SrTiO 3 substrate (see the Experimental Section for details). As the lattice parameters of PbZrO 3 are larger than that of SrTiO 3 , the BaZrO 3 buffer layer is used to modulate the misfi t between the PbZrO 3 fi lm and the SrTiO 3 substrate. Figure 1 a shows a plan-view bright-fi eld TEM image of a PbZrO 3 fi lm on BaZrO 3 buffered (100) SrTiO 3 substrate. The dark dot contrast in the image originates from threading dislocations in the fi lm arising from the threading segments associated with the misfi t dislocations due to the lattice mismatch. The HAADF-STEM image of the cross-sectional sample (Figure 1 b) shows morphology of the fi lm system with ≈35 nm thick PbZrO 3 fi lm. In the medium-magnifi ed HAADF image, Figure 1 c, one can clearly see that the PbZrO 3 fi lm is epitaxially grown on the BaZrO 3 buffer layer. Due to antiparallel displacements of Pb atoms and antiphase rotation of the octahedra, [ 29,30 ] the AFE structure characterized by the (010) and (021) refl ections, which are the superstructure refl ections of q Σ = 1/4(110) p and q R = 1/2(111) p with respect to the pseudocubic structure, [ 31 ] can clearly be identifi ed from the fast Fourier transformation (FFT) image illustrated in Figure 1 d. Considering that the image intensities are atomic-number dependent and roughly proportional to Z 2 , [ 32 ] the TBs residing inside the AFE domain areas can be directly observed based on the antiparallel displacements of the heavy Pb atoms along the orthorhombic [100] direction. A typical APB on the atomic scale, type R III-1 = 1/4 [02 n ] ( n = 0 or 2) is shown in Figure 1 e.Based on atomic scale investigation and analysis of GPA on the HAADF images, all types of TBs in the AFE PbZrO 3 thin fi lms were studied and the results are given in Table 1 . Figure 2 a shows the morphology of two types of TBs, the R III-1 and R I-1 = 1/4 [21 n ] type boundaries, in the 35 nm thick fi lm. The characteristic displacements of the Pb atoms are displayed as a function of the distance away from the boundary centers in Figure 2 b. Based on the average displacements (33.1 pm) of the Pb atoms away from their ideal positions, the spontaneous polarization is estimated as P S = 16 and 17 µC cm ...

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Electron Microscopic Studies on Domain Structure of PbZrO₃

Cited by 81 publications

References 9 publications

Transmission electron microscopy studies of Pb(Zr0.99Ti0.01)O3 single crystals

Transmission electron microscopy studies of Pb(Zr0.99Ti0.01)O3 single crystals

Tunable Domain Switching Features of Incommensurate Antiferroelectric Ceramics Realizing Excellent Energy Storage Properties

Preferential Creation of Polar Translational Boundaries by Interface Engineering in Antiferroelectric PbZrO₃ Thin Films

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Electron Microscopic Studies on Domain Structure of PbZrO3

Cited by 81 publications

References 9 publications

Transmission electron microscopy studies of Pb(Zr0.99Ti0.01)O3 single crystals

Transmission electron microscopy studies of Pb(Zr0.99Ti0.01)O3 single crystals

Tunable Domain Switching Features of Incommensurate Antiferroelectric Ceramics Realizing Excellent Energy Storage Properties

Preferential Creation of Polar Translational Boundaries by Interface Engineering in Antiferroelectric PbZrO3 Thin Films

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Electron Microscopic Studies on Domain Structure of PbZrO₃

Preferential Creation of Polar Translational Boundaries by Interface Engineering in Antiferroelectric PbZrO₃ Thin Films