Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxy

Aoki, Toshihiro; Chang, Yong; Badano, G.; Zhao, Jun; Grein, C. H.; Sivananthan, S.; Smith, David J.

doi:10.1007/s11664-003-0056-8

Cited by 26 publications

(28 citation statements)

References 9 publications

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“…10,22,23 Within a surface crater defect, crystals of both HgCdTe and Te continue to nucleate, with the HgCdTe grains being either semicoherent or incoherent to the Te grains. 10 Energy-dispersive X-ray spectroscopy (EDS) data also confirmed the existence of excessive Te in the surface crater defects (Fig. 7).…”

Section: Resultsmentioning

confidence: 99%

“…It has been demonstrated to be a valuable nondestructive multipurpose microscopic research tool for studying HgCdTe-related materials. [9][10][11][12][13][14][15][16][17][18][19][20][21] In this work, a Veeco D3100 scanning probe microscopy (SPM) system configured for tapping-mode operation was used for AFM measurements. A 1-X Si tapping-mode tip/ cantilever with a backside Al reflective enhancement coating was employed to obtain good signal-tonoise ratio.…”

Section: Methodsmentioning

confidence: 99%

“…The TEM measurements have been discussed in detail elsewhere, 10,[22][23][24][25] including the additional steps required to reduce ion-milling damage and preparation artefacts. 25 …”

Section: Methodsmentioning

confidence: 99%

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Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy

Chang

Becker

Grein

et al. 2008

Journal of Elec Materi

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The surface morphology and crystallinity of HgCdTe films grown by molecular beam epitaxy (MBE) on both CdZnTe and CdTe/Si (211)B substrates were characterized using atomic force microscopy (AFM), as well as scanning (SEM) and transmission (TEM) electron microscopy. Crosshatch patterns and sandybeach-like morphologies were commonly found on MBE (211) HgCdTe epilayers grown on both CdZnTe and CdTe/Si substrates. The patterns were oriented along the 213 Â Ã , 231 Â Ã , and 011 Â Ã directions, which were associated with the intersection between the (211) growth plane and each of the eight equivalent HgCdTe slip planes. This was caused by strain-driven operation of slip in these systems with relative large Schmid factor, and was accompanied by dislocation formation as well as surface strain relief. Surface crater defects were associated with relatively high growth temperature and/or low Hg flux, whereas microtwins were associated with relatively low growth temperature and/or high Hg flux. AFM and electron microscopy were used to reveal the formation mechanisms of these defects. HgCdTe/HgCdTe superlattices with layer composition differences of less than 2% were grown by MBE on CdZnTe substrates in order to clarify the formation mechanisms of void defects. The micrographs directly revealed the spiral nature of growth, hence demonstrating that the formation of void defects could be associated with the Burton, Cabrera, and Frank (BCF) growth mode. Void defects, including microvoids and craters, were caused by screw defect clusters, which could be triggered by Te precipitates, impurities, dust, other contamination or flakes. Needle defects originated from screw defect clusters linearly aligned along the 011 Â Ã directions with opposite Burgers vector directions. They were visible in HgCdTe epilayers grown on interfacial superlattices. Hillocks were generated owing to twin growth of void or needle defects on (111) planes due to low growth temperature and the corresponding insufficient Hg movement on the growth surface. Therefore, in addition to nucleation and growth of HgCdTe in the normal two-dimensional layer growth mode, the BCF growth mode played an important role and should be taken into account during investigation of HgCdTe MBE growth mechanisms.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy

Chang

Becker

Grein

et al. 2008

Journal of Elec Materi

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“…The detailed investigation of formation of SF was studied in ZnSe/GaAs(100). The maximum SF observed at 3-D growth [19] and formed on the (111) facets that occur on the slopes of three-dimensional islands [20]. The lattice mismatch between film and substrate for ZnTe/Si (310) heterostructure is f = 12.3%.…”

Section: Stacking Faultsmentioning

confidence: 99%

HgCdTe nanostructures on GaAs and Si substrate for IR and THz radiation detecting

Yakushev¹,

Варавин

Васильев

et al. 2012

J. Phys.: Conf. Ser.

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Abstract. All-round studies of heteroepitaxial HgCdTe nanostructures (NS) growth on GaAs and Si substrates by molecular beam epitaxy have been carried out. In case of Si substrate HgCdTe NS's is very perspectives for IR detectors because of equal thermal expention coefficient with silicon read-out circuits. The problems of HgCdTe conjugations with Si at epitaxy connected with large differences in lattice mismatch and differences in chemical bonding that leads to antiphased domains. We found that the precise formation of transition layer (2 nm in thickness between Si substrates and first ZnTe buffer layer leads to growth HgCdTe NS's without antiphrasis domains. V-defects and etch pits densities are equal to 10 3 cm -2 and 10 7 cm -2 respectively. The HgCdTe/Si were used for fabrication photovoltaic 640×512 MWIR focal plane arrays. The operability for 1/2 = 4.2 m (77К) was over 97%. The response (Sv) and NETD were as 1,5×10 9 V/W and less 20 mK respectively. We developed the precise growth of symmetric and antisymmetric HgTe QW. We found the following effects: the presence 2D electron gas with high mobilities over 5×10 5 cm/V×s in doped HgTe QW, the presence @D holes and electrons in undoped HgTe QW and high sensitivity to linear and circular polarized IR and THz radiation in 6 -400 m region.

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“…The details of the growth procedure are discussed elsewhere. 5,6 The samples are n-type ͑low 10 15 cm −3 ͒, with visible surface defects such as craters, 7,8 voids, and microtwins less than mid-10 3 -cm −2 in density and threading dislocation densities in the low 10 5 cm −2 as revealed by etch pit density measurements using Schaake's etchant. 9 They are selected to be representative of standard n-type absorber region of typical photodiodes.…”

Section: S Guhamentioning

confidence: 99%

Narrow gap HgCdTe absorption behavior near the band edge including nonparabolicity and the Urbach tail

Chang

Grein

Sivananthan

et al. 2006

Applied Physics Letters

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Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxy

Cited by 26 publications

References 9 publications

Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy

Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy

HgCdTe nanostructures on GaAs and Si substrate for IR and THz radiation detecting

Narrow gap HgCdTe absorption behavior near the band edge including nonparabolicity and the Urbach tail

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