Electron mobility and landau level width in modulation-doped GaAs-AlxGa1−xAs heterojunctions

Voisin, P.; Guldner, Y.; Vieren, J. P.; Voos, M.; Maan, J.C.; Delescluse, P.; Linh, Nuyen T.

doi:10.1016/0378-4363(83)90610-1

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Electron mobility and landau level width in modulation-doped GaAs-AlxGa1−xAs heterojunctions

Cited by 8 publications

References 13 publications

Polaron Coupling in GaAs-GaAlAs Heterostructures Observed by Cyclotron and Magnetophonon Resonance

Polaron Coupling in GaAs-GaAlAs Heterostructures Observed by Cyclotron and Magnetophonon Resonance

Electronic Properties of Semiconductor Heterostructures in a Magnetic Field

Contribution of the electron-phonon interaction to the broadening of cyclotron resonance line of a two-dimensional electron gas in multiple quantum well structures

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