2012
DOI: 10.1016/j.synthmet.2012.07.021
|View full text |Cite
|
Sign up to set email alerts
|

Electron mobility in hexaazatriphenylene hexacarbonitrile field-effect transistors

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
11
0

Year Published

2013
2013
2016
2016

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 8 publications
(11 citation statements)
references
References 26 publications
0
11
0
Order By: Relevance
“…23,24 On the other hand, the HAT-CN interlayer would not provide a flat surface, especially as compared to graphene. 17,25 This leads to changes in the direction of molecular orbitals, which affects the electronic coupling of the overlayer (active layer). Although these effects are expected to be quite different for each system, fundamental studies on them are still lacking.…”
Section: Introductionmentioning
confidence: 99%
“…23,24 On the other hand, the HAT-CN interlayer would not provide a flat surface, especially as compared to graphene. 17,25 This leads to changes in the direction of molecular orbitals, which affects the electronic coupling of the overlayer (active layer). Although these effects are expected to be quite different for each system, fundamental studies on them are still lacking.…”
Section: Introductionmentioning
confidence: 99%
“…Thus, the open circuit voltage (V OC ), FF and power conversion efficiency of inverted OSCs based on poly(3-hexylthiophene)(P3HT): [6,6]phenyl-C61-butyric acid methyl ester (PCBM) can be greatly improved by inserting a HAT-CN interlayer between the active layer and the cathode. 174 HAT-CN has also been investigated in magnetoresistive field effect transistors. HAT-CN in organic field effect transistors (OFETs).…”
Section: Hat-cn In Organic Solar Cells (Oscs)mentioning
confidence: 99%
“…A mobility of 2.5 Â 10 À4 cm 2 V À1 s À1 with an ON/OFF ratio of up to 2 Â 10 4 has been measured at room temperature in a bottom-contact n-channel OFET with SiO 2 dielectric and gold drain/source electrodes. 174 HAT-CN has also been investigated in magnetoresistive field effect transistors. The phenomenon of organic magnetoresistance, usually abbreviated to OMAR, refers to the change in electrical resistivity in sandwich structures of nonmagnetic metals and organic materials under a magnetic field.…”
Section: Hat-cn For (Opto)electronic Applicationsmentioning
confidence: 99%
“…To date, various HILs have been reported, [4][5][6][7][8][9][10][11][12][13][14][15] and, among these, 1,4,5,8,9, 11-hexaazatriphenylene-hexacarbonitrile (HAT-CN) has been employed in HILs (leading to low driving voltage) 4,[16][17][18][19][20][21][22] since the first application of OLED by LG Chemical Ltd. 22 HAT-CN was first reported by Czarnik and co-workers 23 and its characterization has been investigated in various studies. [24][25][26][27][28][29] The most remarkable property of HAT-CN is the extremely deep energy level of its lowest unoccupied molecular orbital. Six nitrile groups attached to a heterocyclic moiety generate a large electron withdrawal effect from the heterocycle, making it a strong acceptor.…”
Section: Introductionmentioning
confidence: 99%
“…The injected hole is transported through the HTM, whereas the injected electron is transported through HAT-CN with a mobility of 2.5 × 10 − 4 cm 2 V − 1 s − 1 . 27 Therefore, HAT-CN has attracted attention as an HIL-reducing driving voltage agent.…”
Section: Introductionmentioning
confidence: 99%