Electron Mobility in Hg1−<i>x</i>Cd<i>x</i>Te

Scott, W. C.

doi:10.1063/1.1661217

Cited by 144 publications

(22 citation statements)

References 17 publications

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“…This is consistent with the Hall mobility data reported and modeled previously for HgCdTe grown on CdZnTe. [5][6][7][8][9][10][11][12][13] It is important to note that the dislocation scattering term in Fig. 5 decreases with temperature.…”

Section: Fig 3 Calculated Mobility Versus Carrier Concentration Formentioning

confidence: 98%

“…[5][6][7][8][9][10][11][12][13] The dominant scattering mechanisms in n-type HgCdTe are ionized impurity scattering (IS), alloy disorder (AD), acoustic phonon (AP) and polar optical (PO) phonon scattering. Interface roughness scattering has been shown to be important in HgTe/CdTe super lattice structures, but it is considered negligible in bulk HgCdTe layers.…”

Section: Electron Mobility In N-type Hgcdtementioning

confidence: 99%

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Role of Dislocation Scattering on the Electron Mobility of n-Type Long Wave Length Infrared HgCdTe on Silicon

Carmody

Edwall

Ellsworth

et al. 2007

Journal of Elec Materi

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It has been reported that the basic electrical properties of n-type long wave length infrared (LWIR) HgCdTe grown on silicon, including the majority carrier mobility (l e ) and minority carrier lifetime (s), are qualitatively comparable to those reported for LWIR HgCdTe grown on bulk CdZnTe by molecular beam epitaxy (MBE). Detailed measurements of the majority carrier mobility have revealed important differences between the values measured for HgCdTe grown on bulk CdZnTe and those measured for HgCdTe grown on buffered silicon substrates. The mobility of LWIR HgCdTe grown on buffered silicon by MBE is reported over a large temperature range and is analyzed in terms of standard electron scattering mechanisms. The role of dislocation scattering is addressed for high dislocation density HgCdTe grown on lattice-mismatched silicon. Differences between the low temperature mobility data of HgCdTe grown on bulk CdZnTe and HgCdTe grown on silicon are partially explained in terms of the dislocation scattering contribution to the total mobility.

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Section: Fig 3 Calculated Mobility Versus Carrier Concentration Formentioning

confidence: 98%

Section: Electron Mobility In N-type Hgcdtementioning

confidence: 99%

Role of Dislocation Scattering on the Electron Mobility of n-Type Long Wave Length Infrared HgCdTe on Silicon

Carmody

Edwall

Ellsworth

et al. 2007

Journal of Elec Materi

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“…Only for high conductivities and mobilities at low temperatures, the agreement could probably be improved by solving the above mentioned air-gap problem. Generally, the mobility of the sample Q 154 is lower by a factor of three as compared to data reported for high quality bulk material and epitaxial layers [31][32][33].…”

Section: Comparison Of Microwave-determined and Transport-determined mentioning

confidence: 80%

Contactless measurement of the conductivity of II?VI epitaxial layers by means of the partially filled waveguide method

et al. 1992

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Abstract. We report the contactless determination of the conductivity, the mobility and the carrier concentration of II-VI semiconductors by means of the technique of the partially filled waveguide at a microwave frequency of 9 GHz. The samples are CdllgTe epitaxial layers, grown on CdZnTe substrates by molecular beam epitaxy. The conductivity is determined from the transmission coefficient of the sample in the partially filled waveguide. For the analysis of the experimental data, the complex transmission coefficient is calculated by a rigorous multi-mode matching procedure. By varying the conductivity of the sample, we obtain an optimum fit of the calculated data to the experimental results. Comparison with conductivity data determined by the van der Pauw method shows that our method allows to measure the conductivity with good accuracy. The behaviour of the transmission coefficient of the sample is discussed in dependence on the layer conductivity, the layer thickness and the dielectric constant of the substrate. The calculations require to consider in detail the distribution of the electromagnetic fields in the sample region. The usual assumption of a hardly disturbed TEIO mode cannot be used in our case.By applying a magnetic field in extraordinary Voigt configuration. galvanomagnetic measurements have been carried Qut which yield the mobility and thus the carrier concentration. These results are also in good agreement with van der Pauw transport measurements.. 72.80.Ey, 78.70.Gq [here is a growing interest in II-VI semiconductors bepuse of their potential applications as devices in the areas ~f opto-electronics and photonics. Their bandgap spans a !wide range from the infrared (CdHgTe) to the violet (ZnS). (consequently, some members of this semiconcutors family lire used as sensitive infrared detectors while others will be iauitable for the realization of LED's etc. with light emission pn the blue part of the visible spectrum. But a number of F hnical problems have to be overcome before we know . w to fabricate reliable devices of this kind. A major step i towards solving these problems is the growth of high quality epitaxial films by means of a new, recently developed growth process, namely photoassisted molecular beam epitaxy (PAMBE) [1,2]. The growth of such films has always been difficult because of the tendency of U-VI compounds to incorporate local defects such as vacancies, interstilials and impurities [3). After the growth of the epitaxial layers, it is absolutely necessary to characterize the samples, i.e. to measure the conductivity, the Hall effect etc., in order to control and optimize their quality with sufficient accuracy in a short time. The knowledge of the electrical transport parameters is especially required in the field of device fabrication. Unfortunately, that is often hampered by the fact that it is difficult or sometimes even impossible to obtain good ohmic contacts. One reason for this is the well known tendency of self-compensation in II-VI compounds.To avoid these problems. a...

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“…The method discussed above has been used to obtain @ for some combination [2], where x represents the fraction of the compound with phonon temperature 8,. I n all the cases studied so far the iteration procedure was found t,o yield monotonically convergent results.…”

Section: Computational Resultsmentioning

confidence: 99%

Calculation of the Electron Mobility Limited by Two‐Phonon Mode Polar Optical Scattering

Nag¹

1974

Physica Status Solidi (b)

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An iteration method is presented for the accurate calculation of the electron mobility limited by two-phonon polar optical phonon scattering. Test calculations indicate that the results obtained by applying Mathiessen's rule may be in error by as much as 15% in some cases.E s wird eine Iterationsmethode angegeben zur exakten Berechnung der Elektronenbeweglichkeit, die durch Zwei-Phononen-Streuung polarer optischer Phononen begrenzt wird. Testrechnungen zeigen, daB die Ergebnisse, die mit der Mathiessenschen Regel erhalten werden, in einigen Fallen Fehler bis zu 15% enthalten konnen.

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Electron Mobility in Hg1−xCdxTe

Cited by 144 publications

References 17 publications

Role of Dislocation Scattering on the Electron Mobility of n-Type Long Wave Length Infrared HgCdTe on Silicon

Role of Dislocation Scattering on the Electron Mobility of n-Type Long Wave Length Infrared HgCdTe on Silicon

Contactless measurement of the conductivity of II?VI epitaxial layers by means of the partially filled waveguide method

Calculation of the Electron Mobility Limited by Two‐Phonon Mode Polar Optical Scattering

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