Electron Mobility in Inversion and Accumulation Layers on Thermally Oxidized Silicon Surfaces

Sun, Shiyu; Plummer, J.D.

doi:10.1109/jssc.1980.1051439

Cited by 160 publications

(141 citation statements)

References 31 publications

Supporting

Mentioning

128

Contrasting

Unclassified

Order By: Relevance

“…For state-of-the-art bulk-Si MOSFET it has been clearly established that by taking η equal to 0.5 for electrons the mobility-field curves obey a "universal mobility" law independently of substrate doping [15,16]. More recently, a similar universal behaviour has been observed for strained-Si MOSFET [11].…”

Section: Introductionmentioning

confidence: 78%

“…Many works have been dedicated to the study of transport in bulk Si MOSFET inversion layer, both experimentally [14][15][16] and theoretically [17][18][19][20]. Since pioneering work of Sabnis and Clemens this type of transport is commonly characterized by the curves of carrier mobility plotted as a function of effective vertical field defined by [14] b i eff Si…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electron effective mobility in strained-Si/Si1−xGex MOS devices using Monte Carlo simulation

Aubry-Fortuna

Dollfus

Galdin‐Retailleau

2005

Solid-State Electronics

View full text Add to dashboard Cite

Based on Monte Carlo simulation, we report the study of the inversion layer mobility in n-channel strained Si/ Si 1-x Ge x MOS structures. The influence of the strain in the Si layer and of the doping level is studied. Universal mobility curves µ eff as a function of the effective vertical field E eff are obtained for various state of strain, as well as a fall-off of the mobility in weak inversion regime, which reproduces correctly the experimental trends. We also observe a mobility enhancement up to 120 % for strained Si/ Si 0.70 Ge 0.30 , in accordance with best experimental data. The effect of the strained Si channel thickness is also investigated: when decreasing the thickness, a mobility degradation is observed under low effective field only.

show abstract

Section: Introductionmentioning

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Electron effective mobility in strained-Si/Si1−xGex MOS devices using Monte Carlo simulation

Aubry-Fortuna

Dollfus

Galdin‐Retailleau

2005

Solid-State Electronics

View full text Add to dashboard Cite

show abstract

“…A similar effect is seen in Si MOSFETs where the channel electron mobility is limited to <600 cm 2 V −1 s −1 while the bulk value for low-doped material is >1400 cm 2 V −1 s −1 . [209] As discussed in Sections 2.2 and 2.4, the growth of a high-quality c-BN/diamond heterostructure could in principle mitigate this mobility reduction and produce very-high-mobility transistors.…”

Section: Materials/device Properties (mentioning

confidence: 99%

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

1,057

463

View full text Add to dashboard Cite

“…Research has shown that carrier mobility near the semiconductor surface is lower than the bulk value [18,19]; this is particularly so for the SCM oxide-silicon interface which can be expected to be high in various forms of crystal defects and interface trap density. This is especially important for inversion layer carrier transport which is parallel to the surface, which we believe to be the main cause of the difference observed between Fig.…”

Section: Data Of Simulation With Mobility Degradationmentioning

confidence: 98%

Modeling mobility degradation in scanning capacitance microscopy for semiconductor dopant profile measurement

Yao

Yeow

2004

SPIE Proceedings

View full text Add to dashboard Cite

This paper addresses the influence of mobility degradation on the SCM measurement via modeling and comparison with experimental SCM data. The rational for looking into mobility effect is that SCM capacitance measurement is carried out at 915 MHz. At this frequency, resistance of semiconductor surface can be comparable to the reactance of the SCM capacitance. In our simulation carrier mobilities at the semiconductor surface are set low compared to their bulk values to reflect surface mobility degradation. Our results show that the simulated SCM dC / dV is significantly reduced in the vicinity of p-n junction reflecting what is observed in experiment. We attribute this to the fact that the capacitance between the inverted surface and the SCM probe is not detected due to the high resistance (compared to the reactance of the SCM capacitance) of the inversion layer below the semiconductor and oxide interface. Only the capacitance on the accumulation side is extracted thus leading to the lowering of the detected SCM capacitance and dC / dV . The major conclusion is that the effect of high resistance due to mobility degradation has to be treated carefully for accurate extraction of dopant profile from experimental SCM data.

show abstract

Electron Mobility in Inversion and Accumulation Layers on Thermally Oxidized Silicon Surfaces

Cited by 160 publications

References 31 publications

Electron effective mobility in strained-Si/Si1−xGex MOS devices using Monte Carlo simulation

Electron effective mobility in strained-Si/Si1−xGex MOS devices using Monte Carlo simulation

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Modeling mobility degradation in scanning capacitance microscopy for semiconductor dopant profile measurement

Contact Info

Product

Resources

About