Electron mobility in ZnSe single crystals

Abstract

Temperature dependence of electron mobility in n-ZnSe single crystals is investigated in the temperature range 77-300 K. A comparative analysis of experimental data with the known theoretical dependences calculated using solution of the Boltzmann transport equation and taking into consideration all major scattering mechanisms and screening effects is carried out. The good agreement between the experimental and theoretical dependences of electron mobility on both temperature and electron concentration is observed for the samples with various compensation ratios. It is shown that parameters such as the ionized impurity concentration and acceptor concentration can quickly be estimated for strongly compensated samples.В интервале температур от 77 до 300 К исследована температурная зависимость подвижности электронов в монокристаллах n-ZnSe. Проведен сопоставительный анализ экспериментальных данных с известными теоретическими зависимостями, полученными из решения кинетического уравнения Больцмана с учетом основных механизмов рассеяния и процессов экранирования. Наблюдается хорошее согласие экспериментальных и рассчитанных зависимостей подвижности электронов от температуры и концентрации носителей тока с учетом различной степени компенсации примеси. Показано, что для сильно компенсированных образцов может быть сделана экспресс-оценка таких параметров, как концентрация ионизированной примеси и концентрация акцепторов.

Hybrid functionals studies of structural and electronic properties of ZnxCd(1−x)S and (ZnxCd1−x)(SexS1−x) solid solution photocatalysts

“…7a and 7b, shows that the width of the conduction band narrows in order ZnSe > CdS > ZnS, which is in accordance with the trend found for the experimental results of their electron mobility: ZnSe (w600 cm 2 V À1 s À1 ) > CdS (w385 cm 2 V À1 s À1 ) > ZnS (w200 cm 2 V À1 s À1 ) [60,61]. Although the width of conduction band of ZnS is slightly narrower than that of CdS, the degree of dispersion of the conduction bands of Zn x Cd 1-x S solid solution does not decrease monotonously with the increase of Zn doping amount x, which is in sharp contrast with the monotonic change trend of the valence bandwidth.…”

Mathematical assessment of the thermal band gap variation of semiconductors

“…Identifying E g as the Standard Gibbs energy [13], the course of dE g /dT in figure 6 describes the entropy of formation of electron hole pairs and [6], therefore, T p defines the temperature where the largest thermally induced change of the formation entropy takes place. We further noticed that T p closely coincide with the temperature where the individual mobility maximum of the charge carriers occurs for the investigated semiconductors (about 60 K [14], 70 K [15], 100 K [16], and 40 K [17] for ZnS, GaAs, GaP, and ZnSe, respectively). Hence, T p indicates the transition of the scattering process as well, i.e.…”

ZnSe quantum dots modified with a Ni(cyclam) catalyst for efficient visible-light driven CO2 reduction in water

“…ZnSe is a stable semiconductor with a direct band gap of 2.7 eV, 17 which enables absorption of near-UV and visible light, unlike ZnS which requires excitation by UV light. 18 Additionally, electron mobility in ZnSe (610 cm 2 V –1 s –1 ) 19 is significantly higher than in its sulfide analogues ZnS (200 cm 2 V –1 s –1 ) and CdS (385 cm 2 V –1 s –1 ). 20 Despite these favourable properties, ZnSe has received little attention for solar fuels generation.…”