Electron momentum density and band structure calculations of α- and β-GeTe

Anisotropy and thermal properties in GeTe semiconductor by Raman analysis

“…The highest valence band (VB) and the lowest conduction band (CB) are dominated by the 4p orbital of Ge and the 5p orbital of Te, respectively. These observations are consistent with previous work 28 and verify the reliability and accuracy of the calculated results.…”

“…[22][23][24][25][26][27] More importantly, as a member of the family of low-symmetric layered materials, GeTe has a narrow bandgap (E g ) of ∼0.7 eV, which is rather useful for infrared optoelectronic devices, including light-emission and lightdetection. 28,29 For example, Zhao et al reported a prototype photodetector based on GeTe films with a high responsivity of 10 2 A W −1 and a detectivity of 10 13 Jones under irradiation with an 850 nm laser. 30 These suggest that, being a low-symmetric laminate material with strong anisotropic nature, GeTe has the potential to be a promising material for use in polarization-dependent optothermal or optoelectrical devices.…”

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

“…2c. It can vary greatly depending on the experimental conditions and theoretical models [31]. In this work, the estimated E g of the GeTe films before and after annealing was 0.85 and 0.70 eV, respectively.…”

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

“…2 (c). It can vary greatly depending on the experimental conditions and theoretical models [31]. In this work, the estimated E g of the GeTe films before and after annealing was 0.85 and 0.70 eV, respectively.…”