“…The reason that undoped LEC GaAs grown from stoichiometric or As-rich melt has a semi-insulating property has been considered to be that EL2 mainly compensates the residual carbon acceptor. Thus, much work has been reported on the EL2 state (for recent reviews, see, for example, Miyazawa et a1 (1988), Mochizuki and Ikoma (1988), Fillard (1988), Discher and Kaufmann (1988), Kaminska (1988), Stievenard and von Bardeleben (1988), Meyer (1988), Baraff and Lannoo (1988), Guillot 1988, Makram-Ebeid andBoher (1988), Bourgoin and Lannoo (1988), and references therein). Moreover, the microscopic structure of the native defects and their complex in GaAs has been investigated theoretically (Baraff and Lannoo 1988, Dabrowski and Scheffler 1988, Chadi and Chang 1988, and some atomic models of EL2 such as isolated AsGa (antisite arsenic) (Kaminska 1988), AsGa-VAs (As vacancy) pair (Lagowski et a1 1982a(Lagowski et a1 , b, 1986), As cluster (Mochizuki and Ikoma 1988), AsGa divacancy pair (Wagner and Van Vechten 1987) and AsG~-AsI (As interstitial) pair (von Bardeleben er a1 1986) have been proposed.…”