1988
DOI: 10.1051/rphysap:01988002305080900
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Electron nuclear double resonance (ENDOR) spectroscopy of the EL2 defect in GaAs

Abstract: 2014 L'étude du défaut EL2 dans GaAs semi-isolant par spectroscopie ENDOR détectée optiquement (ODENDOR) montre que ce défaut est dû à une paire d'antisite arsenic-interstitiel arsenic, AsGa-Asi. Les paramètres d'interaction hyperfine ainsi que la symétrie des premiers et deuxièmes voisins et de l'interstitiel ont été analysés. L'interprétation quantitative de l'interaction quadrupolaire permet de déduire le site et l'état de charge de l'interstitiel d'arsenic. Abstract. 2014 Optically detected electron nuc… Show more

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Cited by 11 publications
(2 citation statements)
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“…The reason that undoped LEC GaAs grown from stoichiometric or As-rich melt has a semi-insulating property has been considered to be that EL2 mainly compensates the residual carbon acceptor. Thus, much work has been reported on the EL2 state (for recent reviews, see, for example, Miyazawa et a1 (1988), Mochizuki and Ikoma (1988), Fillard (1988), Discher and Kaufmann (1988), Kaminska (1988), Stievenard and von Bardeleben (1988), Meyer (1988), Baraff and Lannoo (1988), Guillot 1988, Makram-Ebeid andBoher (1988), Bourgoin and Lannoo (1988), and references therein). Moreover, the microscopic structure of the native defects and their complex in GaAs has been investigated theoretically (Baraff and Lannoo 1988, Dabrowski and Scheffler 1988, Chadi and Chang 1988, and some atomic models of EL2 such as isolated AsGa (antisite arsenic) (Kaminska 1988), AsGa-VAs (As vacancy) pair (Lagowski et a1 1982a(Lagowski et a1 , b, 1986), As cluster (Mochizuki and Ikoma 1988), AsGa divacancy pair (Wagner and Van Vechten 1987) and AsG~-AsI (As interstitial) pair (von Bardeleben er a1 1986) have been proposed.…”
Section: Introductionmentioning
confidence: 99%
“…The reason that undoped LEC GaAs grown from stoichiometric or As-rich melt has a semi-insulating property has been considered to be that EL2 mainly compensates the residual carbon acceptor. Thus, much work has been reported on the EL2 state (for recent reviews, see, for example, Miyazawa et a1 (1988), Mochizuki and Ikoma (1988), Fillard (1988), Discher and Kaufmann (1988), Kaminska (1988), Stievenard and von Bardeleben (1988), Meyer (1988), Baraff and Lannoo (1988), Guillot 1988, Makram-Ebeid andBoher (1988), Bourgoin and Lannoo (1988), and references therein). Moreover, the microscopic structure of the native defects and their complex in GaAs has been investigated theoretically (Baraff and Lannoo 1988, Dabrowski and Scheffler 1988, Chadi and Chang 1988, and some atomic models of EL2 such as isolated AsGa (antisite arsenic) (Kaminska 1988), AsGa-VAs (As vacancy) pair (Lagowski et a1 1982a(Lagowski et a1 , b, 1986), As cluster (Mochizuki and Ikoma 1988), AsGa divacancy pair (Wagner and Van Vechten 1987) and AsG~-AsI (As interstitial) pair (von Bardeleben er a1 1986) have been proposed.…”
Section: Introductionmentioning
confidence: 99%
“…ENDOR measurements made it possible to determine the symmetry and interaction with typically three or four neighboring shells by detecting the 31 P nucleus [224,228]. A general review can be found in reference [230]. A general review can be found in reference [230].…”
Section: Impurity Centers In Semiconductor Host Crystalsmentioning
confidence: 99%