Electron optics of multi-beam scanning electron microscope

Gheidari, A. Mohammadi; Kruit, P.

doi:10.1016/j.nima.2010.12.090

Cited by 32 publications

(17 citation statements)

References 14 publications

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“…3 There are at least two ways to do this. The first way is to introduce an additional electron optical system to focus the TE beams with a large magnification onto a detector where the TE beams will be focused with a small spot size and large pitch (at least larger than the largest spot size of focused TE beams).…”

Section: Te Imaging System Design In Delft Mbsem1mentioning

confidence: 99%

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Transmission electron imaging in the Delft multibeam scanning electron microscope 1

Ren

Kruit

2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Our group is developing a multibeam scanning electron microscope (SEM) with 196 beams in order to increase the throughput of SEM. Three imaging systems using, respectively, transmission electron detection, secondary electron detection, and backscatter electron detection are designed in order to make it as versatile as a single beam SEM. This paper focuses on the realization of the transmission electron imaging system, which is motivated by biologists' interest in the particular contrast this can give. A thin sample is placed on fluorescent material which converts the transmitted electrons to photons. Then, the 196 photon beams are focused with a large magnification onto a camera via a high quality optical microscope integrated inside the vacuum chamber. Intensities of the transmission beams are retrieved from the camera images and constructed to form each beam's image using an off line image processing program. Experimental results prove the working principle of transmission electron imaging and show that details of 10–20 nm in images of biological specimen are visible. Problems encountered in the results are discussed and plans for future improvements are suggested.

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Section: Te Imaging System Design In Delft Mbsem1mentioning

confidence: 99%

“…Several groups are doing these, e.g., Mohammadi-Gheidari and Kruit, 3 D. Zeidler and G. Dellemann, 4 and Enyama et al 5 Some published their experimental results, e.g., Mohammadi-Gheidari et al, 6 and Eberle et al 7 Zeiss also released a commercial multibeam SEM (MBSEM) which has 61 or 91 beams, with secondary electron (SE) detection.…”

Section: Introductionmentioning

confidence: 99%

Transmission electron imaging in the Delft multibeam scanning electron microscope 1

Ren

Kruit

2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…Although the design of the multibeam electron source and its integration in a standard SEM have been described in detail elsewhere, [24][25][26] it is useful here to give a brief description of the MBSEM. In Fig.…”

Section: Experiments a Multibeam Semmentioning

confidence: 99%

“…We developed a multibeam electron source based on a standard single Schottky electron emitter mounted on a regular scanning electron microscope (SEM). This multibeam SEM (MBSEM) system distinguishes itself from other systems in that it projects an array of 14 Â 14 focused beams onto a sample with a probe size and current per beam comparable to that of a standard single beam SEM, 24,25 i.e., 196 beams, each with a 1 nm probe size and 30 pA of current.…”

Section: Introductionmentioning

confidence: 99%

Parallel electron-beam-induced deposition using a multi-beam scanning electron microscope

Post

Gheidari

Hagen

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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Lithography techniques based on electron-beam-induced processes are inherently slow compared to light lithography techniques. The authors demonstrate here that the throughput can be enhanced by a factor of 196 by using a scanning electron microscope equipped with a multibeam electron source. Using electron-beam induced deposition with MeCpPtMe 3 as a precursor gas, 14 Â 14 arrays of Pt-containing dots were deposited on a W/Si 3 N 4 /W membrane, with each array of 196 dots deposited in a single exposure. The authors demonstrate that by shifting the array of beams over distances of several times the beam pitch, one can deposit rows of closely spaced dots that, although originating from different beams within the array, are positioned within 5 nm of a straight line.

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“…To enhance the writing speed, multi-beam systems can be used. Post et al [3] demonstrated that the throughput of EBID can be enhanced by a factor of 196, when using a multi-beam scanning electron microscope (SEM) that delivers 14x14 beams to the sample surface, with the same characteristics as a state-of-the-art single beam SEM [4,5]. But for large area manufacturing of single nanometer structures and devices it would be great when a fast and low-cost technique such as Nano Imprint Lithography (NIL) could be used.…”

Section: Introductionmentioning

confidence: 99%

Pattern transfer into silicon using sub-10 nm masks made by electron beam induced deposition

Scotuzzi

Kamerbeek

Goodyear

et al. 2015

Alternative Lithographic Technologies VII

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To demonstrate the possibility of using EBID masks for sub-10 nm pattern transfer into silicon, first experiments were carried out by using 20-40 nm EBID masks, that were etched by different chemistries. It is experimentally verified that recipes based on hydrogen bromide, chlorine and boron trichloride can selectively etch silicon when using 20-40 nm masks made by EBID. We observed an enhancement of the height ratio, i.e. the ratio of the height of structures before and after etching, up to a factor of 3.5 when using the chlorine chemistry. To demonstrate the pattern transfer of sub-10 nm structures, further experiments were carried out using 8-20 nm EBID masks in combination with hydrogen bromide, chlorine and fluorine chemistries. Fluorine chemistry provided the best results in terms of surface smoothness and height ratio. In this case, 7.4 nm lines were successfully transferred into silicon, resulting in 14.3 nm wide lines with a height ratio of approximately 5.

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Electron optics of multi-beam scanning electron microscope

Cited by 32 publications

References 14 publications

Transmission electron imaging in the Delft multibeam scanning electron microscope 1

Transmission electron imaging in the Delft multibeam scanning electron microscope 1

Parallel electron-beam-induced deposition using a multi-beam scanning electron microscope

Pattern transfer into silicon using sub-10 nm masks made by electron beam induced deposition

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