Electron Paramagnetic Center in Neutron-Irradiated AlN

Honda, Makoto; Atobe, K.; Fukuoka, Noboru; Okada, M.; Nakagawa, Masuo

doi:10.1143/jjap.29.l652

Cited by 17 publications

(15 citation statements)

References 6 publications

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“…2, curve a) shows a superposition of two structureless EPR lines. The broad EPR line at g = 2.004 with a linewidth (full width at half maximum (FWHM)) of 9.0 to 9.1 mT is very similar to the EPR line found in neutron-irradiated AlN ceramic having a FWHM of (9.04 AE 0.28) mT (peak to peak linewidth of (7.68 AE 0.24) mT) [17,18]. The narrow EPR line at g = 2.003 has a linewidth of 0.8 to 0.9 mT.…”

Section: Epr and Endorsupporting

confidence: 63%

“…The broad EPR line at g = 2.007 in neutron-irradiated AlN ceramic [17,18], which was assigned to an electron on a nitrogen vacancy (F centre), is very similar to the broad line at g = 2.004 of acceptor A 2 in X-irradiated AlN ceramics. However, there is no evidence for an F centre in UV-or X-irradiated AlN ceramics: After X-irradiation at 4.2 K we could not observe any characteristic F centre band at 380 nm by measuring the magnetic circular dichroism of the optical absorption [24] in a nearly transparent AlN ceramic sample.…”

Section: Discussionmentioning

confidence: 63%

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Investigation of Oxygen-Related Luminescence Centres in AlN Ceramics

Schweizer

Rogulis

Spaeth

et al. 2000

phys. stat. sol. (b)

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The structure of oxygen‐related luminescence centres in nominally undoped and Y2O3 doped AlN ceramics was investigated by electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optically‐detected EPR. The photoluminescence‐detected EPR lines having g‐values of 1.990 and 2.008 were assigned to a recombination between neighbouring donor and acceptor pairs. The two EPR lines at g = 1.987 and 2.003 detected via the recombination luminescence in the afterglow are thought to be due to a recombination between the same, but distant donor and acceptor pairs. The donor was previously speculated to be an electron trapped on an oxygen impurity which substitutes for a nitrogen on a regular lattice site. The defect structure of the acceptor was established by ENDOR to be a hole trapped on an ON–vAl complex (ON oxygen on a regular N site, vAl Al vacancy). The measured superhyperfine interaction is caused by two equivalent 27Al nuclei both with a = ±27.0 MHz.

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Section: Epr and Endorsupporting

confidence: 63%

Section: Discussionmentioning

confidence: 63%

Investigation of Oxygen-Related Luminescence Centres in AlN Ceramics

Schweizer

Rogulis

Spaeth

et al. 2000

phys. stat. sol. (b)

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“…11,12,[15][16][17] In addition, an EPR and optical absorption study in neutron-irradiated polycrystalline material has correlated an absorption band at 370 nm with an EPR signal at g ϭ2.007. 18,19 The defect responsible was tentatively assigned to the N vacancy (V N ). Theoretical studies predict V N to have a deep donor level between 0.7 eV and 0.9 eV below the conduction-band edge, in contrast to V N in GaN, which is calculated to be a shallow donor.…”

Section: Introductionmentioning

confidence: 99%

Optically detected electron paramagnetic resonance of AlN single crystals

et al. 1999

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AlN single crystals have been investigated using photoluminescence ͑PL͒ and optical detection of electron paramagnetic resonance in the PL ͑ODEPR͒. All crystals were found to exhibit intense PL extending from the visible into the near infrared. Several Sϭ1 centers, each with its own distinct emission spectrum, and distant Sϭ1/2 pair recombination centers have been observed via ODEPR. In all except one center, D5, no hyperfine structure was observed preventing chemical identification of the impurity involved. In the case of D5 the partially resolved hyperfine structure suggests interaction with a 100% abundant nucleus of Iϳ5/2. We present arguments to associate it with a displaced host aluminum atom.

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“…In neutron-irradiated polycrystalline AlN, a broad electron paramagnetic resonance ͑EPR͒ signal with g = 2.007 was assigned to V N . 5,6 In as-grown AlN, a number of optical detection of EPR spectra were observed but non of them showed a resolved hyperfine ͑hf͒ structure and hence could not be identified. 7 In a more recent study of as-grown AlN, an EPR spectrum with an unresolved hf structure due to the interaction with 27 Al nuclei ͑nuclear spin I = 5 / 2 and 100% natural abundance͒ was observed and assigned to either the neutral N vacancy ͑V N 0 ͒ or the shallow O N donor.…”

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confidence: 99%

Defects at nitrogen site in electron-irradiated AlN

Son

Gali

Szabó

et al. 2011

Applied Physics Letters

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In high resistance AlN irradiated with 2 MeV electrons, an electron paramagnetic resonance (EPR) spectrum, labeled EI-1, with an electron spin S=1/2 and a clear hyperfine (hf) structure was observed. The hf structure was shown to be due the interaction between the electron spin and the nuclear spins of four (27)A nuclei with the hf splitting varying between similar to 6.0 and similar to 7.2 mT. Comparing the hf data obtained from EPR and ab initio supercell calculations we suggest the EI-1 defect to be the best candidate for the neutral nitrogen vacancy in AlN.Original Publication:Nguyen Son Tien, A. Gali, A. Szabo, M. Bickermann, T. Ohshima, J. Isoya and Erik Janzén, Defects at nitrogen site in electron-irradiated AlN, 2011, Applied Physics Letters, (98), 24, 242116.http://dx.doi.org/10.1063/1.3600638Copyright: American Institute of Physicshttp://www.aip.org

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Electron Paramagnetic Center in Neutron-Irradiated AlN

Cited by 17 publications

References 6 publications

Investigation of Oxygen-Related Luminescence Centres in AlN Ceramics

Investigation of Oxygen-Related Luminescence Centres in AlN Ceramics

Optically detected electron paramagnetic resonance of AlN single crystals

Defects at nitrogen site in electron-irradiated AlN

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