The lattice location of implanted silver in Si was studied by means of the emission channeling technique. Following 60 keV room temperature implantation of radioactive 111 Ag at a dose of 2-3×10 12 cm −2 , we identify around 30% of Ag on near-substitutional sites (≈0.45 Å from ideal S-sites). Upon annealing at 200-300°C, the fraction on near-S sites reaches a maximum around 60-80%. For higher annealing temperatures it decreases again and at 600°C Ag starts to diffuse out of the Si samples. We estimate the activation energy for the dissociation of near-substitutional Ag to be 1.8-2.2 eV. The experimental results are compared to those of Cu in Si, and common features and characteristic differences in the behavior of the two group 1B metals are discussed. [4,5] and infrared absorption spectroscopy [6] to a defect of C 2v or lower symmetry, and was suggested to be neutral substitutional Ag S 0 . Electron paramagnetic resonance (EPR) measurements have identified at least 8 different Ag-related centers in Si, six of them are supposed to be due to pairs of Ag with other impurities or with itself [7][8][9]. Two centers, however, named NL56 and NL42 have been suggested to consist of substitutional Ag S 0 and tetrahedral interstitial Ag i 0 , respectively. While the NL56 center exhibited tetragonal (C 2v ) or lower symmetry, indicating a displaced substitutional position of Ag, the NL42 center was the only one found to have tetrahedral (T d ) symmetry.It is well known that Ag, like other transition metals, is gettered by highly damaged regions [10,11]