Electron–Phonon Coupling and Electron–Phonon Scattering in SrVO₃

Abstract

Understanding the physics of strongly correlated electronic systems has been a central issue in condensed matter physics for decades. In transition metal oxides, strong correlations characteristic of narrow d bands are at the origin of remarkable properties such as the opening of Mott gap, enhanced effective mass, and anomalous vibronic coupling, to mention a few. SrVO3 with V4+ in a 3d1 electronic configuration is the simplest example of a 3D correlated metallic electronic system. Here, the authors' focus on the observation of a (roughly) quadratic temperature dependence of the inverse electron mobility of this seemingly simple system, which is an intriguing property shared by other metallic oxides. The systematic analysis of electronic transport in SrVO3 thin films discloses the limitations of the simplest picture of e–e correlations in a Fermi liquid (FL); instead, it is shown show that the quasi‐2D topology of the Fermi surface (FS) and a strong electron–phonon coupling, contributing to dress carriers with a phonon cloud, play a pivotal role on the reported electron spectroscopic, optical, thermodynamic, and transport data. The picture that emerges is not restricted to SrVO3 but can be shared with other 3d and 4d metallic oxides.

Optical Plasmon Excitation in Transparent Conducting SrNbO3 and SrVO3 Thin Films

“…Therefore, as the carrier density in both systems are very similar (1.7 × 10 22 cm −3 for SNO, as shown in Figure 1c, and 2.1 × 10 22 cm −3 for SVO [11] ), it follows that the effective mass for free carriers is smaller in SNO than in SVO (m*(SNO) < m*(SVO)). This observation is consistent with the larger size of the 4d orbitals compared to the 3d ones, that weakens electron-electron correlations and electron-phonon coupling [16] and thus reduces m* of SNO with respect to SVO. Oka et al [5] inferred a similar conclusion from their analysis of the temperature dependence of the conductivity.…”

Extended Oxygen Octahedral Tilt Proximity near Oxide Heterostructures

“…Note that the g coefficient is proportional to the dispersion of relevant phonon modes. , In correlated metallic systems such as SRO, phonon dispersion can be further renormalized by electron–phonon coupling . According to previous angle-resolved photoemission (ARPES) studies, − a kink dispersion in the d xz /yz band of SRO can originate from electron–phonon coupling, particularly with oxygen-related phonons . To investigate the electron–phonon coupling of SRO, we measured dispersions of the d xz /yz band in 15 uc of SRO films with −0.5 and +1.5% strains by in situ ARPES (Figure S16, Supporting Information).…”

Barrierless Self-Trapping of Photocarriers in Co3O4

“…The self-trapping of free carriers has detrimental impacts on the optoelectronic applications because this process suppresses the carrier mobility, ,,− enhances the nonradiative recombination, − and reduces chemical potential. , While in TMOs the small polarons and the associated insufficient characteristics are well-accepted, the self-trapping mechanism of photocarriers is still not well-understood. Here, we investigated the self-trapping of photocarriers in Co 3 O 4 epitaxial monocrystalline thin films by using transient absorption (TA) and time-resolved terahertz (TR-THz) spectroscopies.…”