1997
DOI: 10.1103/physrevb.56.10089
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Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate

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Cited by 80 publications
(97 citation statements)
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“…2 /D ≃ 1 − 10 ps, much smaller than the inelastic electron-phonon (τ ph ≃ 1 ns at 1 K in Nb) and electron-electron (τ ee ≃ 0.1 ns) interaction times [18].…”
mentioning
confidence: 84%
“…2 /D ≃ 1 − 10 ps, much smaller than the inelastic electron-phonon (τ ph ≃ 1 ns at 1 K in Nb) and electron-electron (τ ee ≃ 0.1 ns) interaction times [18].…”
mentioning
confidence: 84%
“…The same function arises in studies of phonon effects on the conductivity of disordered metals 20,21 . Similarly, one may obtain a contribution of longitudinal phonons.…”
Section: Model Of the Electron-phonon Interactionmentioning
confidence: 99%
“…Following ref. 21 , we take the following material parameters: β = 1.4, p F = 1.3 · 10 −19 g · cm/s, and v t = 1.2 · 10 5 cm/s. Then Eq.…”
Section: Numerical Estimatesmentioning
confidence: 99%
“…14 for 2D electron gas in GaAs/Al x Ga 1Ϫx As heterostructure, DiTusa et al 20 for CuCr films, and Ptitsina et al 21 for Au, Al, Be, Nb, and NbC films. This T 2 behavior can be partly explained by the scattering from the static potential, but this is not the case, e.g., in thin gold film.…”
Section: Introductionmentioning
confidence: 99%