Electron–phonon interactions in silicon: Mean free paths, related distributions and transport characteristics

Akkerman, A.; Murat, M.

doi:10.1016/j.nimb.2015.03.024

Cited by 16 publications

(8 citation statements)

References 24 publications

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“…Indeed, electron-phonon interactions have been shown to be negligible for metals as their MFP is much higher than electron-electron interactions, except in the case of conductivity calculations for thermalized electrons with a very low energy. For semiconductors, Akkerman et al [52] have applied the same phonon models used in our work and have shown that electron-phonon interactions become significant in silicon below 5 eV. As we have chosen to kill all electrons below the electron affinity of 4.25 eV for Si, phonon interactions have not been implemented for this material.…”

Section: Electron-phonon Interactions In Siomentioning

confidence: 99%

Geant4 physics processes for microdosimetry and secondary electron emission simulation: Extension of MicroElec to very low energies and 11 materials (C, Al, Si, Ti, Ni, Cu, Ge, Ag, W, Kapton and SiO2)

Gibaru

Inguimbert

Caron

et al. 2021

Nuclear Instruments and Methods in Physics Research Section B:

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HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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Section: Electron-phonon Interactions In Siomentioning

confidence: 99%

Geant4 physics processes for microdosimetry and secondary electron emission simulation: Extension of MicroElec to very low energies and 11 materials (C, Al, Si, Ti, Ni, Cu, Ge, Ag, W, Kapton and SiO2)

Gibaru

Inguimbert

Caron

et al. 2021

Nuclear Instruments and Methods in Physics Research Section B:

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“…Bregrenzung effect), following [16]- [17], [31] a dependence of the electron depth has been added to the surface plasmon mean free path [25]. Phonons energy losses are simply taken into account assuming only the emission of an optical phonon [32]. It is based on the mean free paths recently calculated by Akkerman et al [32].…”

Section: Inelastic Mean Free Pathsmentioning

confidence: 99%

“…Phonons energy losses are simply taken into account assuming only the emission of an optical phonon [32]. It is based on the mean free paths recently calculated by Akkerman et al [32]. The energy loss is taken equal to 0.05 eV for silicon [33].…”

Section: Inelastic Mean Free Pathsmentioning

confidence: 99%

Ionizing Doses Calculations for Low Energy Electrons in Silicon and Aluminum

Pierron

Inguimbert

Belhaj

et al. 2017

IEEE Trans. Nucl. Sci.

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International audienceThe electron transport at low and very low energy (10 eV-2 keV) is investigated with a Monte Carlo (MC) code in silicon and aluminum. The elastic scattering with nuclei is described by Mott's model of partial waves, whereas the inelastic collisions with electrons are described by the complex dielectric function theory. Comparisons of MC simulations with electron emission yields (EEY) and energy loss spectra experimentally measured in ultrahigh vacuum on Ar-etched samples are given. The practical ranges and the ionizing dose calculations are presented down to 10 eV for electrons in silicon and aluminum. The simulation results show a correlation between the EEY and the ionizing doses. At low energy, while the electrons stay in the first ~10 nm from the surface due to the elastic scattering, the EEY increases and the ratio of the ionizing dose over the incident energy decreases. Above 200 eV, when the electrons go deeper into the solid due to the inelastic scattering, the EEY decreases and the ionizing dose ratio increases

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“…where T e and T i are the electronic and ionic temperatures respectively, C e (T e ) is the electronic specific heat, and D e (T e ) is the electronic diffusivity , which in silicon is 33.6 cm 2 /s at room temperature [43]. The spatial variation of the electronic diffusivity and electronic specific heat were ignored.…”

Section: Two Temperature Modelmentioning

confidence: 99%

“…is the electronic diffusivity , which in silicon is 33.6 cm 2 s −1 at room temperature [43]. The spatial variation of the elec tronic diffusivity and electronic specific heat were ignored.…”

Section: Two Temperature Modelmentioning

confidence: 99%

The influence of the electronic specific heat on swift heavy ion irradiation simulations of silicon

Khara

Murphy

Daraszewicz

et al. 2016

J. Phys.: Condens. Matter

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Abstract. Swift heavy ion (SHI) irradiation of materials is often modelled using the two-temperature model. While the model has been successful in describing SHI damage in metals, it fails to account for the presence of a bandgap in semiconductors and insulators. Here we explore the potential to overcome this limitation by explicitly incorporating the influence of the bandgap in the parameterisation of the electronic specific heat for Si. The specific heat as a function of electronic temperature is calculated using finite temperature density functional theory with three different exchange correlation functionals, each with a characteristic bandgap. These electronic temperature dependent specific heats are employed with two temperature molecular dynamics to model ion track creation in Si. The results obtained using a specific heat derived from density functional theory showed dramatically reduced defect creation compared to models that used the free electron gas specific heat. As a consequence, the track radii are smaller and in much better agreement with experimental observations. We also observe a correlation between the width of the band gap and the track radius, arising due to the variation in the temperature dependence of the electronic specific heat.

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Electron–phonon interactions in silicon: Mean free paths, related distributions and transport characteristics

Cited by 16 publications

References 24 publications

Geant4 physics processes for microdosimetry and secondary electron emission simulation: Extension of MicroElec to very low energies and 11 materials (C, Al, Si, Ti, Ni, Cu, Ge, Ag, W, Kapton and SiO2)

Geant4 physics processes for microdosimetry and secondary electron emission simulation: Extension of MicroElec to very low energies and 11 materials (C, Al, Si, Ti, Ni, Cu, Ge, Ag, W, Kapton and SiO2)

Ionizing Doses Calculations for Low Energy Electrons in Silicon and Aluminum

The influence of the electronic specific heat on swift heavy ion irradiation simulations of silicon

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