Electron-phonon interactions in subband excited photoluminescence of hexagonal boron nitride

Вохминцев, А. С.; Weinstein, I. A.; Zamyatin, D. A.

doi:10.1016/j.jlumin.2018.12.036

Cited by 51 publications

(41 citation statements)

References 53 publications

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“…The luminescence properties of hBN have been studied mainly in recent years. [ 7,9–15 ] Museur et al reported three photoluminescence (PL) bands at the energies of 5.3, 3.75, and 3.1 eV for pyrolytic hBN (pBN) samples. [ 9 ] pBN samples are high‐purity samples, free of carbon and oxygen.…”

Section: Introductionmentioning

confidence: 99%

Identification of the Nitrogen Interstitial as Origin of the 3.1 eV Photoluminescence Band in Hexagonal Boron Nitride

Khorasani

Frauenheim

Aradi

et al. 2021

Physica Status Solidi (b)

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Nitrogen interstitials (normalNnormali) have the lowest formation energy among intrinsic defects of hexagonal boron nitride (hBN) under n‐type and N‐rich conditions. Using an optimized hybrid functional, which reproduces the gap and satisfies the generalized Koopman's condition, an normalNnormali configuration is found, which is lower in energy than the ones reported so far. The (0/–) charge transition level is also much deeper, so normalNnormali acts as a very efficient compensating center in n‐type samples. Its calculated photoluminescence (PL) at 3.0 eV agrees well with the position of an N‐sensitive band measured at 3.1 eV. It is also found that the nitrogen vacancy (normalVnormalN) cannot be the origin of the three‐boron‐center (TBC) electron paramagnetic resonance (EPR) center and in thermal equilibrium it is even unlikely to exist in n‐type samples.

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Section: Introductionmentioning

confidence: 99%

Identification of the Nitrogen Interstitial as Origin of the 3.1 eV Photoluminescence Band in Hexagonal Boron Nitride

Khorasani

Frauenheim

Aradi

et al. 2021

Physica Status Solidi (b)

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“…In contrast, the impure sample, which contains a subtle amount of carbon and oxygen, 5 shows additional luminescent structures in the region between 300 and 400 nm (the origin of which is still controversial. 5,[8][9][10][11][12][13] ) Moreover, owing to the relaxation process of excited carriers through excitons to the impurity bands, the intensity of the exciton luminescence for the impure sample is lower than that for the pure sample. 14 In fact, such an impurity-incorporated domain is often contained in HPHT single crystals.…”

Section: Introductionmentioning

confidence: 99%

Far-UV photoluminescence microscope for impurity domain in hexagonal-boron-nitride single crystals by high-pressure, high-temperature synthesis

Watanabe

Taniguchi

2019

npj 2D Mater Appl

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Hexagonal-boron-nitride single crystals grown by high-pressure, high-temperature (HPHT) synthesis are commonly used as the insulated substrate dielectric for two-dimensional (2D) atomic-layered materials like graphene and transition metal dichalcogenides (TMDs) to improve the flatness of the 2D materials atomically without disturbing the 2D electronic characteristics. However, HPHT single crystals often contain impure regions, which can hold subtle clues in regard to the 2D atomic-layered materials for new discoveries in the physics of 2D materials. To identify the position of the impure domains and to avoid them when the 2D devices are prepared, a far-ultraviolet photoluminescence microscope was developed. This microscope makes it possible to visualize the impure-growth region with ease in a no-contact and non-destructive manner. npj 2D Materials and Applications (2019) 3:40; https://doi.

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“…Indeed, according to the literature data [2,10,11,16,32,33] the band gap of h-BN varies from ~5 eV [2,32] to ~6 eV [33] depending on the synthesis method, morphology, impurity composition, etc. Nevertheless, the sub-gap excitation of BN is quite usual [16,17,19,21,[34][35][36][37][38][39]. Previously, it has been shown that it is possible to excite the emission of pure and doped nano-BN with the quanta smaller than E g .…”

Section: Resultsmentioning

confidence: 99%

Light-emitting properties of BN synthesized by different techniques

Rudko¹,

Sartinska²,

Ісаєва³

et al. 2020

SPQEO

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Light-emitting properties of boron nitride powders of different morphology grown using various techniques have been studied. All samples were hexagonal BN (h-BN), while the content of impurity phases varied considerably. The wide photoluminescence band in the visible range has been observed. h-BN synthesized using carbothermal reduction method exhibited the highest efficiency of the photoluminescence emission. The intensity of BN emission has been interpreted in terms of interplay between the emission of intrinsic defects stabilized by carbon, carbon-related recombination centers and the centers of non-radiative recombination caused by the presence of sassolite phases in the samples.

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Electron-phonon interactions in subband excited photoluminescence of hexagonal boron nitride

Cited by 51 publications

References 53 publications

Identification of the Nitrogen Interstitial as Origin of the 3.1 eV Photoluminescence Band in Hexagonal Boron Nitride

Identification of the Nitrogen Interstitial as Origin of the 3.1 eV Photoluminescence Band in Hexagonal Boron Nitride

Far-UV photoluminescence microscope for impurity domain in hexagonal-boron-nitride single crystals by high-pressure, high-temperature synthesis

Light-emitting properties of BN synthesized by different techniques

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