Electron–phonon scattering in an etched InGaAs quantum wire

Sugaya, Takeyoshi; Bird, Jonathan P.; Ferry, D. K.; Shimizu, Toshiyuki; Jang, Kee-Youn; Ogura, Masahiko; Sugiyama, Yoshinobu; Yonei, Kenji

doi:10.1016/s0921-4526(01)01375-8

Cited by 9 publications

(4 citation statements)

References 11 publications

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“…The 2DEG wires in these papers range from 25 to 770 nm wide and 8 to 25 nm thick. [11][12][13]47,48 The n and Γ/n carrier values from their data are shown in Fig. 6(a).…”

Section: Comparison With Literature Valuesmentioning

confidence: 99%

Heat flow in InAs/InP heterostructure nanowires

et al. 2012

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The transfer of heat between electrons and phonons plays a key role for thermal management in future nanowirebased devices, but only a few experimental measurements of electron-phonon (e-ph) coupling in nanowires are available. Here, we combine experimental temperature measurements on an InAs/InP heterostructure nanowire system with finite element modeling to extract information on heat flow mediated by e-ph coupling. We find that the electron and phonon temperatures in our system are highly coupled even at temperatures as low as 2 K. Additionally, we find evidence that the usual power-law temperature dependence of electron-phonon coupling may not correctly describe the coupling in nanowires and show that this result is consistent with previous research on similar one-dimensional electron systems. We also compare the strength of the observed e-ph coupling to a theoretical analysis of e-ph interaction in InAs nanowires, which predicts a significantly weaker coupling strength than observed experimentally.

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“…The 2DEG wires in these papers range from 25 to 770 nm wide and 8 to 25 nm thick. [11][12][13]47,48 The n and Γ/n carrier values from their data are shown in Fig. 6(a).…”

Section: Comparison With Literature Valuesmentioning

confidence: 99%

Heat flow in InAs/InP heterostructure nanowires

et al. 2012

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“…We have carried out Joule heating measurements on three etched quantum wires ͑QWRs͒ of various widths and 2D electron gases ͑2DEGs͒ over temperatures ranging from 0.035 K to 20 K. The devices are fabricated in an InAlAs/InGaAs/InAlAs heterostructure with a 25 nm wide In 0.53 Ga 0.47 As quantum well region, grown on a lattice matched InP substrate. 8,9 Price 10 assumed the electrons to occupy a single spin degenerate twodimensional subband, and then considered ͑separately͒ the two temperature limits for the Bloch (k B TӶប q ) and equipartition (k B Tӷប q ) regimes. The correspondence of results obtained from these two inherently different techniques is very good, justifying usage of the phase breaking time to estimate the effective electron temperature.…”

Section: Introductionmentioning

confidence: 99%

Power loss measurements in quasi-1D and quasi-2D systems in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructure

Prasad

Ferry

Wieder

2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inElectron heating measurements in an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterostructure system J.Transport and quantum electron mobility in the modulation Si δ-doped pseudomorphic GaAs/In 0.2 Ga 0.8 As/Al 0.2 Ga 0.8 As quantum well grown by metalorganic vapor phase epitaxy Quantum transport in high mobility modulation doped Ga 0.25 In 0.75 As/InP quantum wells

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“…7.15 we plot the temperature dependence of the energy relaxation time, multiplied by electron number N, which is determined by applying equation (7.2) to our data. The solid line indicates the T −3 variation, expected for the energy relaxation due to the scattering by three dimensional phonons [89]. A similar analysis is made for the L = 8µm and L = 32µm segments of the device shown in figure 7.1.…”

Section: Electron-phonon Scattering and Energy Relaxationsmentioning

confidence: 66%

“…Energy relaxations were also studied in strained quantum wells of Ge/Si 0.4 Ge 0.6 and Si/Si 0.7 Ge 0.3 where the large lattice mismatch at the interface was argued to give rise to two-dimensional electronphonon scattering [88]. Recently, electron-phonon interactions and energy relaxations have been investigated in an etched InGaAs quantum wire, where, the current dependence of the electron temperature, and the temperature dependence of the energy-relaxation time was found to be consistent with energy relaxation processes dominated by scattering of electrons with three-dimensional phonons [89].In this thesis, we study energy-relaxation and electron-phonon interactions in HgTe-based two dimensional topological insulators. Temperature-dependent resistance of the sample is used as thermometer to probe the electron-phonon interactions.…”

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confidence: 99%

Efeito Hall de spin em nanoestruturas semicondutoras: rumo à novos dispositivos de spintrônica

Rahim¹

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AcknowledgmentsAll praises for almighty ALLAH who gave me the opportunity and strength to accomplish this job. I am deeply indebted to my supervisor, Professor Gennady Gusev, for his insightful guidance and for introducing me to the fast growing field of topological insulators. I greatly appreciate him for his ideas, extensive discussions, valuable comments and encouragement throughout the course of my studies at USP. This work would not have been possible without his support and interest and I am so grateful for all the time that Prof. Gusev devoted to work on this project.I am also very grateful to Prof. Alexander Levine, for introducing me to programming and the code written for simulation of transport properties of 2d topological insulators. I appreciate helpful discussions with him and how to edit the code for our device geometries. I would express my sincere appreciation to Prof. Felix Hernandez, Prof. Luis Dias and Prof. Alain Quivy for helpful discussions on research and other topics of condensed matter Physics. I gratefully acknowledge our collaborators at the Institute of Semiconductor Physics, Novosibirsk, for providing HgTe samples studied in this work. I would like to express my gratitude to Prof. Lucy Assali and Prof. Carmen Prado, for their help in bureaucracy and official matters. I would like to thank the professors of the Institute of Physics, particularly those with whom I studied my postgraduate courses.I am also very thankful to the jury of my qualification exam: Prof. Valmir Chitta, Prof. Felix Hernandez and Prof. Luiz Nagamine for their valuable suggestions and comments that helped improving this manuscript.I would like to thank all my friends and colleagues from University of São Paulo for their various form of support, during my PhD, especially, Jorge Leon, Bruno Anghinoni, Zahra Sadre Momtaz, Julio Cesar, Pablo Badilla, Fernando Aliaga, Diana Torres, Dennis Brennes, Anastasia Burimova, Natalia Ballaminut, Thiago Melo, Luiz Eleno, Ricardo Igarashi, Fernando Massa, Luiz Gomes, Victor Manotas, Gerson Pessoto, Giovanni Galgano, Flavio Moraes, Juan Enrique, Antonio Pasquale, Carlos Mera, David Tamayo, Niko Mamani, Claudio Padilha and Fabricio Marques. I would like to acknowledge peoples in CPG (Claudia, Eber, Andrea and Paula) and the secretaries of DFMT (Rosana, Sandra, Cecilia and Tatiana) for their help in all official documentations and correspondences. I would also like to acknowledge peoples in cryogenics and the lab technicians Paulinho, Geraldo, Eron, Renato and Olimpio for their help in cryo and other lab related stuff and Luiz Carlos for network and computer related work.A special thanks go to all my Pakistani friends in São Paulo: Saeed Ullah, Hanif ur Rehman, Irfan Ullah, Taj Ali Khan, Asif Iqbal, Huma Asif, Ishtiaq Ahmed, Anees Ahmad, Anwar Shamim, Faiz Ahmed, Haq Nawaz, Ali Paracha, M Khalid, Latif Ullah, M Nawaz, Liaqat Ali, Niaz Marwat, Ajmir khan and Bakhat Ali for their moral support and also Ishtiaq Ahmed for help in correction of thesis.I would express my gratitude to my ...

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Electron–phonon scattering in an etched InGaAs quantum wire

Cited by 9 publications

References 11 publications

Heat flow in InAs/InP heterostructure nanowires

Heat flow in InAs/InP heterostructure nanowires

Power loss measurements in quasi-1D and quasi-2D systems in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructure

Efeito Hall de spin em nanoestruturas semicondutoras: rumo à novos dispositivos de spintrônica

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